Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), Wanju-Gun, 55324, Republic of Korea.
Applied Materials Institute for BIN Convergence, Department of BIN Fusion Technology and Department of Polymer-Nano Science and Technology, Chonbuk National University, Jeonju, 54896, Republic of Korea.
Science. 2018 Nov 16;362(6416):817-821. doi: 10.1126/science.aau2132.
Although polycrystalline hexagonal boron nitride (PC-hBN) has been realized, defects and grain boundaries still cause charge scatterings and trap sites, impeding high-performance electronics. Here, we report a method of synthesizing wafer-scale single-crystalline hBN (SC-hBN) monolayer films by chemical vapor deposition. The limited solubility of boron (B) and nitrogen (N) atoms in liquid gold promotes high diffusion of adatoms on the surface of liquid at high temperature to provoke the circular hBN grains. These further evolve into closely packed unimodal grains by means of self-collimation of B and N edges inherited by electrostatic interaction between grains, eventually forming an SC-hBN film on a wafer scale. This SC-hBN film also allows for the synthesis of wafer-scale graphene/hBN heterostructure and single-crystalline tungsten disulfide.
虽然多晶六方氮化硼（PC-hBN）已经实现，但缺陷和晶界仍会导致电荷散射和陷阱，阻碍高性能电子学的发展。在这里，我们报告了一种通过化学气相沉积合成晶圆级单晶六方氮化硼（SC-hBN）单层薄膜的方法。硼（B）和氮（N）原子在液态金中的有限溶解度促进了高温下表面上吸附原子的高扩散，从而引发了圆形 hBN 晶粒。这些晶粒通过 B 和 N 边缘的自准直进一步演变成紧密堆积的单峰晶粒，这是由晶粒之间的静电相互作用继承而来的，最终在晶圆上形成 SC-hBN 薄膜。这种 SC-hBN 薄膜还可以用于合成晶圆级的石墨烯/hBN 异质结和单晶二硫化钨。
