Yuan Jiashuai, Jian Chuanyong, Shang Zhihui, Yao Yu, Wang Bicheng, Li Yixiang, Wang Rutao, Fu Zhipeng, Li Meng, Hong Wenting, He Xu, Cai Qian, Liu Wei
State Key Laboratory of Functional Crystals and Devices, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China.
College of Chemistry and materials, Fujian Normal University, Fuzhou, Fujian, 350007, China.
Nat Commun. 2025 Jan 23;16(1):964. doi: 10.1038/s41467-025-56386-9.
Two-dimensional (2D) materials have been identified as promising candidates for future electronic devices. However, high dielectric constant (κ) materials, which can be integrated with 2D semiconductors, are still rare. Here, we report a hydrate-assisted thinning chemical vapor deposition (CVD) technique to grow manganese oxide (MnO) single crystal nanosheets, enabled by a strategy to minimize the substrate lattice mismatch and control the growth kinetics. The material demonstrated a dielectric constant up to 135, an equivalent oxide thickness (EOT) as low as 0.8 nm, and a breakdown field strength (E) exceeding 10 MV/cm. MoS field-effect transistors (FETs) integrated with MnO thin films through mechanical stacking method operate under low voltages (<1 V), achieving a near 10 I/I ratio and a subthreshold swing (SS) as low as 84 mV/dec. The MoS FET exhibit nearly zero hysteresis (<2 mV/MV cm⁻¹) and a low drain-induced barrier lowering (~20 mV/V). This work further expands the family of 2D high-κ dielectric materials and provides a feasible exploration for the epitaxial growth of single-crystal thin films of non-layered materials.
二维（2D）材料已被视为未来电子器件的有潜力候选材料。然而，能够与二维半导体集成的高介电常数（κ）材料仍然很少见。在此，我们报告了一种水合物辅助的化学气相沉积（CVD）薄化技术来生长氧化锰（MnO）单晶纳米片，该技术通过最小化衬底晶格失配和控制生长动力学的策略得以实现。该材料表现出高达135的介电常数、低至0.8纳米的等效氧化层厚度（EOT）以及超过10兆伏/厘米的击穿场强（E）。通过机械堆叠方法与MnO薄膜集成的MoS场效应晶体管（FET）在低电压（<1伏）下工作，实现了近10的I/I比和低至84毫伏/十倍频程的亚阈值摆幅（SS）。MoS FET表现出几乎为零的滞后现象（<2毫伏/兆伏·厘米⁻¹）和低的漏极诱导势垒降低（约20毫伏/伏）。这项工作进一步扩展了二维高κ介电材料家族，并为非层状材料单晶薄膜的外延生长提供了可行的探索。
