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新型 GaN 多层膜中垂直键的形成:超越范德华固体。

Onset of vertical bonds in new GaN multilayers: beyond van der Waals solids.

机构信息

UNAM - National Nanotechnology Research Center and Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey.

出版信息

Nanoscale. 2018 Nov 29;10(46):21842-21850. doi: 10.1039/c8nr05626a.

Abstract

A suspended single layer of GaN in a honeycomb structure is stable in a planar geometry. By stacking these GaN layers one can construct bilayers or multilayers, even new three-dimensional (3D) periodic structures. In this study, we clarified how the planar layers are buckled with the onset of vertical Ga-N bonds. Among the four stable phases of bilayer GaN, only one of them maintains the planar geometry, which is bound by weak van der Waals interactions. For the remaining three phases, the layers are buckled with the onset of weak vertical bonds, and attain total energies slightly lower than that of the planar geometry. Structural phase changes, as well as direct-indirect band transitions take place under strain and electrostatic charging. The vertical bonds become shorter in multilayers, and eventually attain the bulk value. Among the stable phases of 3D periodic GaN, only one with a graphite-like structure behaves as a layered, van der Waals solid; whereby others are 3D uniform crystals beyond the van der Waals solid.

摘要

在蜂窝状结构中,悬空的单层 GaN 在平面几何形状中是稳定的。通过堆叠这些 GaN 层,人们可以构建双层或多层,甚至是新的三维(3D)周期性结构。在这项研究中,我们澄清了随着垂直 Ga-N 键的出现,平面层是如何弯曲的。在双层 GaN 的四个稳定相中,只有一个保持平面几何形状,由较弱的范德华相互作用束缚。对于其余三个相,层在弱垂直键的作用下弯曲,并达到比平面几何形状略低的总能量。应变和静电充电会导致结构相变化和直接-间接带隙跃迁。在多层中,垂直键变得更短,最终达到体值。在稳定的 3D 周期性 GaN 相中,只有具有石墨状结构的相表现为层状、范德华固体;而其他相则是范德华固体之外的 3D 均匀晶体。

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