• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

噻唑诱导的用于超高填充因子钙钛矿太阳能电池的CHNHPbI薄膜的表面钝化和重结晶

Thiazole-Induced Surface Passivation and Recrystallization of CHNHPbI Films for Perovskite Solar Cells with Ultrahigh Fill Factors.

作者信息

Zhang Hongbin, Chen Hui, Stoumpos Constantinos C, Ren Jing, Hou Qinzhi, Li Xin, Li Jiaqi, He Hongcai, Lin Hong, Wang Jinshu, Hao Feng, Kanatzidis Mercouri G

机构信息

School of Materials and Energy , University of Electronic Science and Technology of China , Chengdu 610054 , China.

Department of Chemistry , Northwestern University , 2145 Sheridan Road , Evanston , Illinois 60208 , United States.

出版信息

ACS Appl Mater Interfaces. 2018 Dec 12;10(49):42436-42443. doi: 10.1021/acsami.8b16124. Epub 2018 Nov 30.

DOI:10.1021/acsami.8b16124
PMID:30457323
Abstract

The quality of perovskite films is a crucial factor governing the photovoltaic performance of perovskite solar cells. However, perovskite films fabricated by the conventional one-step spin-coating procedure are far from ideal due to uncontrollable crystal growth. Herein, we report a facile recrystallization procedure using a thiazole additive coupled with vapor annealing to simultaneously modulate the perovskite crystal growth and suppress the surface defects. High quality perovskite films with no pin holes, high crystallinity, large grain size, and low roughness were obtained. Moreover, using the space charge limited current method, we observe that the defect density of the as-prepared perovskite films with the thiazole additive was decreased by 40% when compared with the film without thiazole. The lower defect density of these perovskite films enables the achievement of a final power conversion efficiency of 18% and an exceptionally high fill factor of 0.82, which correspond to a 25% enhancement compared with the control device. Our results reveal a novel and facile path to modulate the perovskite crystal growth and simultaneously suppress the film defect density and increasing efficiency in perovskite photovoltaics and related optoelectronic applications.

摘要

钙钛矿薄膜的质量是决定钙钛矿太阳能电池光伏性能的关键因素。然而,由于晶体生长不可控,通过传统的一步旋涂工艺制备的钙钛矿薄膜远非理想状态。在此,我们报道了一种简便的重结晶工艺,该工艺使用噻唑添加剂并结合气相退火,以同时调节钙钛矿晶体生长并抑制表面缺陷。获得了无针孔、高结晶度、大晶粒尺寸和低粗糙度的高质量钙钛矿薄膜。此外,使用空间电荷限制电流方法,我们观察到与不含噻唑的薄膜相比,添加噻唑添加剂的制备态钙钛矿薄膜的缺陷密度降低了40%。这些钙钛矿薄膜较低的缺陷密度使得最终功率转换效率达到18%,填充因子高达0.82,与对照器件相比提高了25%。我们的结果揭示了一条新颖且简便的途径,可用于调节钙钛矿晶体生长,同时抑制薄膜缺陷密度,并提高钙钛矿光伏及相关光电器件的效率。

相似文献

1
Thiazole-Induced Surface Passivation and Recrystallization of CHNHPbI Films for Perovskite Solar Cells with Ultrahigh Fill Factors.噻唑诱导的用于超高填充因子钙钛矿太阳能电池的CHNHPbI薄膜的表面钝化和重结晶
ACS Appl Mater Interfaces. 2018 Dec 12;10(49):42436-42443. doi: 10.1021/acsami.8b16124. Epub 2018 Nov 30.
2
A facile, solvent vapor-fumigation-induced, self-repair recrystallization of CH3NH3PbI3 films for high-performance perovskite solar cells.一种用于高性能钙钛矿太阳能电池的CH3NH3PbI3薄膜的简便、溶剂蒸汽熏蒸诱导的自修复重结晶方法。
Nanoscale. 2015 Mar 12;7(12):5427-34. doi: 10.1039/c5nr00225g.
3
Solvent-Mediated Intragranular-Coarsening of CHNHPbI Thin Films toward High-Performance Perovskite Photovoltaics.溶剂介导的 CHNHPbI 薄膜的颗粒内粗化,实现高性能钙钛矿光伏器件。
ACS Appl Mater Interfaces. 2017 Sep 20;9(37):31959-31967. doi: 10.1021/acsami.7b09822. Epub 2017 Sep 6.
4
Controlling CH3NH3PbI(3-x)Cl(x) Film Morphology with Two-Step Annealing Method for Efficient Hybrid Perovskite Solar Cells.采用两步退火法控制 CH3NH3PbI(3-x)Cl(x) 薄膜形态以制备高效杂化钙钛矿太阳能电池。
ACS Appl Mater Interfaces. 2015 Aug 5;7(30):16330-7. doi: 10.1021/acsami.5b03324. Epub 2015 Jul 23.
5
Growth of Compact CHNHPbI Thin Films Governed by the Crystallization in PbI Matrix for Efficient Planar Perovskite Solar Cells.钙钛矿薄膜的结晶过程调控对高效平面型钙钛矿太阳能电池的影响
ACS Appl Mater Interfaces. 2018 Mar 14;10(10):8649-8658. doi: 10.1021/acsami.7b18667. Epub 2018 Mar 5.
6
Facile Method to Reduce Surface Defects and Trap Densities in Perovskite Photovoltaics.简便方法可减少钙钛矿光伏表面缺陷和陷阱密度。
ACS Appl Mater Interfaces. 2017 Jun 28;9(25):21292-21297. doi: 10.1021/acsami.7b05133. Epub 2017 Jun 13.
7
Magnetic Field-Assisted Perovskite Film Preparation for Enhanced Performance of Solar Cells.磁场辅助钙钛矿薄膜制备提高太阳能电池性能。
ACS Appl Mater Interfaces. 2017 Jul 5;9(26):21756-21762. doi: 10.1021/acsami.7b03081. Epub 2017 Jun 22.
8
Synergistic Effect of RbBr Interface Modification on Highly Efficient and Stable Perovskite Solar Cells.RbBr界面修饰对高效稳定钙钛矿太阳能电池的协同效应
ACS Omega. 2021 May 17;6(21):13766-13773. doi: 10.1021/acsomega.1c01074. eCollection 2021 Jun 1.
9
High-Performance CHNHPbI-Inverted Planar Perovskite Solar Cells with Fill Factor Over 83% via Excess Organic/Inorganic Halide.通过过量的有机/无机卤化物实现高效 CHNHPbI 倒置平面钙钛矿太阳能电池,填充因子超过 83%。
ACS Appl Mater Interfaces. 2017 Oct 18;9(41):35871-35879. doi: 10.1021/acsami.7b11083. Epub 2017 Oct 4.
10
Single-Crystal-like Perovskite for High-Performance Solar Cells Using the Effective Merged Annealing Method.采用有效融合退火法的高性能太阳能电池用单晶似钙钛矿。
ACS Appl Mater Interfaces. 2017 Apr 12;9(14):12382-12390. doi: 10.1021/acsami.6b16541. Epub 2017 Mar 31.

引用本文的文献

1
Suppressing Interface Defects in Perovskite Solar Cells via Introducing a Plant-Derived Ergothioneine Self-Assembled Monolayer.通过引入植物源麦角硫因自组装单分子层抑制钙钛矿太阳能电池中的界面缺陷
Materials (Basel). 2024 Nov 23;17(23):5739. doi: 10.3390/ma17235739.
2
Towards High-Performance Inverted Mesoporous Perovskite Solar Cell by Using Bathocuproine (BCP).通过使用联喹啉铜(BCP)制备高性能倒置介孔钙钛矿太阳能电池。
Molecules. 2024 Aug 24;29(17):4009. doi: 10.3390/molecules29174009.
3
Defect Passivation via Isoxazole Doping in Perovskite Solar Cells.
通过异恶唑掺杂实现钙钛矿太阳能电池中的缺陷钝化
ACS Omega. 2022 Sep 12;7(38):34278-34285. doi: 10.1021/acsomega.2c03775. eCollection 2022 Sep 27.
4
Hot-Casting Large-Grain Perovskite Film for Efficient Solar Cells: Film Formation and Device Performance.用于高效太阳能电池的热铸大晶粒钙钛矿薄膜:成膜与器件性能
Nanomicro Lett. 2020 Jul 31;12(1):156. doi: 10.1007/s40820-020-00494-2.