Chen Chen, Chen Xiaolong, Yu Hongyi, Shao Yuchuan, Guo Qiushi, Deng Bingchen, Lee Sungmin, Ma Chao, Watanabe Kenji, Taniguchi Takashi, Park Je-Geun, Huang Shengxi, Yao Wang, Xia Fengnian
Department of Electrical Engineering , Yale University , New Haven , Connecticut 06511 , United States.
Department of Physics and Center of Theoretical and Computational Physics , The University of Hong Kong , Hong Kong , China.
ACS Nano. 2019 Jan 22;13(1):552-559. doi: 10.1021/acsnano.8b07290. Epub 2018 Dec 17.
Light-matter interactions in the van der Waals (vdWs) heterostructures exhibit many fascinating properties which can be harnessed to realize optoelectronic applications and probe fundamental physics. Moreover, the electron-phonon interaction in the vdWs heterostructures can have a profound impact on light-matter interaction properties because light excited electrons can strongly couple with phonons in heterostructures. Here, we report symmetry-controlled electron-phonon interactions in engineered two-dimensional (2D) material/silicon dioxide (SiO) vdWs heterostructures. We observe two Raman modes arising from originally Raman-silent phonon modes in SiO. The Raman modes have fixed peak positions regardless of the type of 2D materials in the heterostructures. Interestingly, such Raman emissions exhibit various symmetry properties in heterostructures with 2D materials of different crystalline structures, controlled by their intrinsic electronic band properties. In particular, we reveal chiral Raman emissions with reversed helicity in contrast to that of typical valley polarization in honeycomb 2D materials due to the phonon-assisted excitonic intervalley scattering process induced by electron-hole exchange interaction. The observation of the symmetry-controlled Raman scattering process not only provides a deep insight into the microscopic mechanisms of electron-phonon interactions in vdWs heterostructures but also may lead to the realization of valley-phononic devices.
范德华(vdWs)异质结构中的光与物质相互作用展现出许多迷人的特性,可用于实现光电子应用并探索基础物理学。此外,vdWs异质结构中的电子 - 声子相互作用会对光与物质的相互作用特性产生深远影响,因为光激发的电子能与异质结构中的声子强烈耦合。在此,我们报道了在工程二维(2D)材料/二氧化硅(SiO₂)vdWs异质结构中对称控制的电子 - 声子相互作用。我们观察到SiO₂中原本拉曼沉默的声子模式产生的两种拉曼模式。无论异质结构中二维材料的类型如何,这些拉曼模式都具有固定的峰值位置。有趣的是,这种拉曼发射在具有不同晶体结构的二维材料的异质结构中表现出各种对称特性,这由它们的固有电子能带特性控制。特别是,由于电子 - 空穴交换相互作用引起的声子辅助激子谷间散射过程,我们揭示了与蜂窝状二维材料中典型谷极化相反的具有反向螺旋度的手性拉曼发射。对称控制的拉曼散射过程的观察不仅为深入了解vdWs异质结构中电子 - 声子相互作用的微观机制提供了思路,还可能促成谷声子器件的实现。