Son Si-Young, Baek Yeon-Jin, Beck Ji-Hyun, Kim Jong-Bae, Yang Seung-Ho, Kang Yong-Ho, Hyun Soong-Keun
Department of Materials Process Engineering, Inha University, Incheon 22212, Republic of Korea.
Department of Materials Science and Engineering, Inha University, Incheon 22212, Republic of Korea.
J Nanosci Nanotechnol. 2019 Mar 1;19(3):1699-1703. doi: 10.1166/jnn.2019.16188.
Higher manganese silicide is generally used in thermoelectric devices between 700 K and 900 K. MnSiAl samples were fabricated by two continuous solid-state reactions followed by hot pressing because the electrical conductivity of all the samples is strongly dependent on Al doping, showing superior thermoelectric performance to the as-synthesized higher manganese silicide. The solid-state-reaction was performed at 1173 K for 6 hours. The effects of the sintering temperature were examined by sintering at three different temperatures: 1273 K, 1323 K and 1373 K. For the surface, microstructural, and electrical properties, scanning electron microscopy, X-ray diffraction, and a series of electric conductivity, Seebeck coefficient, and thermal conductivity analyses were conducted, respectively. As a result, the optimal process temperature for Al-doped higher manganese silicide using a hot-press technique was determined.
高级锰硅化物通常用于700K至900K之间的热电器件中。MnSiAl样品是通过两次连续的固态反应然后热压制备的，因为所有样品的电导率强烈依赖于铝掺杂，显示出比合成的高级锰硅化物更好的热电性能。固态反应在1173K下进行6小时。通过在1273K、1323K和1373K这三个不同温度下烧结来研究烧结温度的影响。对于表面、微观结构和电学性能，分别进行了扫描电子显微镜、X射线衍射以及一系列电导率、塞贝克系数和热导率分析。结果，确定了使用热压技术制备铝掺杂高级锰硅化物的最佳工艺温度。
