Kang Byeong-Cheol, Ha Tae-Jun
Department of Electronic Materials Engineering, Kwangwoon University, Seoul, 139-701, Republic of Korea.
J Nanosci Nanotechnol. 2019 Mar 1;19(3):1759-1763. doi: 10.1166/jnn.2019.16258.
There have been constant attempts as regards high-performance thin-film transistors (TFTs) by improving the charge injection between the source/drain electrode (S/D) and the channel. In this paper, we investigate the effect of the electric contact on the device performance of single-wall carbon nanotube (SWCNT) TFTs employing the suitable work function material. In order to realize the electric contacts for the dominant hole injection between the S/D and the SWCNT active channel, a high work function material of molybdenum trioxide (MoO) fabricated by an optimized process are utilized. The contact resistance is extracted by plotting the width-normalized resistance of SWCNTTFT with Pd and MoO contacts as a function of channel length. We also demonstrate low-voltage operating SWCNT TFTs on flexible polyimide substrates with the reduced electric contacts. Without a buffer film which has been widely used to improve the device performance of TFT on a flexible substrate, high-performance low-voltage operating SWCNT-TFTs were achieved.
通过改善源极/漏极（S/D）与沟道之间的电荷注入，人们一直在不断尝试制造高性能薄膜晶体管（TFT）。在本文中，我们研究了采用合适功函数材料的电接触对单壁碳纳米管（SWCNT）TFT器件性能的影响。为了实现S/D与SWCNT有源沟道之间用于主导空穴注入的电接触，我们使用了通过优化工艺制造的高功函数材料三氧化钼（MoO）。通过绘制具有Pd和MoO接触的SWCNT TFT的宽度归一化电阻作为沟道长度的函数来提取接触电阻。我们还展示了在具有减小电接触的柔性聚酰亚胺基板上的低压操作SWCNT TFT。在没有广泛用于改善柔性基板上TFT器件性能的缓冲膜的情况下，实现了高性能低压操作的SWCNT - TFT。
