Gallacher K, Millar R W, Griškevičiūte U, Baldassarre L, Sorel M, Ortolani M, Paul D J
Opt Express. 2018 Oct 1;26(20):25667-25675. doi: 10.1364/OE.26.025667.
Germanium-on-silicon waveguides were modeled, fabricated and characterized at wavelengths ranging from 7.5 to 11 µm. Measured waveguide losses are below 5 dB/cm for both TE and TM polarization and reach values of ∼ 1 dB/cm for ≥ 10 µm wavelengths for the TE polarization. This work demonstrates experimentally for the first time that Ge-on-Si is a viable waveguide platform for sensing in the molecular fingerprint spectral region. Detailed modeling and analysis is presented to identify the various loss contributions, showing that with practical techniques losses below 1 dB/cm could be achieved across the full measurement range.
对硅基锗光波导进行了建模、制造和表征，测量波长范围为7.5至11微米。对于TE和TM偏振，测得的波导损耗均低于5分贝/厘米，对于TE偏振，在波长≥10微米时损耗值达到约1分贝/厘米。这项工作首次通过实验证明，硅基锗是分子指纹光谱区域传感的可行波导平台。文中给出了详细的建模和分析，以确定各种损耗贡献，表明采用实用技术在整个测量范围内可实现低于1分贝/厘米的损耗。
