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基于具有波导群折射率工程的硅马赫-曾德尔干涉仪的高灵敏度温度传感器。

Temperature sensor with enhanced sensitivity based on silicon Mach-Zehnder interferometer with waveguide group index engineering.

作者信息

Zhang Yang, Zou Jun, He Jian-Jun

出版信息

Opt Express. 2018 Oct 1;26(20):26057-26064. doi: 10.1364/OE.26.026057.

Abstract

We propose a highly-sensitive temperature sensor employing a Mach-Zehnder interferometer (MZI) based on silicon-on-insulator (SOI) platform. The waveguide widths in the two MZI arms are tailored to have different temperature sensitivities but nearly the same group refractive indices. A temperature sensor with an enhanced sensitivity of larger than 438pm/°C is experimentally demonstrated, which is over seven times larger than that of conventional silicon optical temperature sensor (about 60pm/°C for quasi-TM mode). Moreover, the sensor is easy to fabricate, only by a single mask, and no need of any polymer cladding, which makes it more robust, and can be used in lab-on-chip systems as a temperature monitor.

摘要

我们提出了一种基于绝缘体上硅(SOI)平台的马赫-曾德尔干涉仪(MZI)的高灵敏度温度传感器。两个MZI臂中的波导宽度经过调整,以具有不同的温度灵敏度,但群折射率几乎相同。实验证明了一种灵敏度增强超过438pm/°C的温度传感器,这比传统的硅光学温度传感器(准TM模式下约为60pm/°C)高出七倍多。此外,该传感器易于制造,仅需一个掩膜,且无需任何聚合物包层,这使其更加坚固,可作为温度监测器用于芯片实验室系统。

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