Zhang Yang, Zou Jun, He Jian-Jun
Opt Express. 2018 Oct 1;26(20):26057-26064. doi: 10.1364/OE.26.026057.
We propose a highly-sensitive temperature sensor employing a Mach-Zehnder interferometer (MZI) based on silicon-on-insulator (SOI) platform. The waveguide widths in the two MZI arms are tailored to have different temperature sensitivities but nearly the same group refractive indices. A temperature sensor with an enhanced sensitivity of larger than 438pm/°C is experimentally demonstrated, which is over seven times larger than that of conventional silicon optical temperature sensor (about 60pm/°C for quasi-TM mode). Moreover, the sensor is easy to fabricate, only by a single mask, and no need of any polymer cladding, which makes it more robust, and can be used in lab-on-chip systems as a temperature monitor.
我们提出了一种基于绝缘体上硅（SOI）平台的马赫-曾德尔干涉仪（MZI）的高灵敏度温度传感器。两个MZI臂中的波导宽度经过调整，以具有不同的温度灵敏度，但群折射率几乎相同。实验证明了一种灵敏度增强超过438pm/°C的温度传感器，这比传统的硅光学温度传感器（准TM模式下约为60pm/°C）高出七倍多。此外，该传感器易于制造，仅需一个掩膜，且无需任何聚合物包层，这使其更加坚固，可作为温度监测器用于芯片实验室系统。
