Juang Jing-Ye, Lu Chia-Ling, Li Yu-Jin, Tu K N, Chen Chih
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan.
Department of Materials Science and Engineering, University of California at Los Angeles, Los Angeles, CA 90095, USA.
Materials (Basel). 2018 Nov 25;11(12):2368. doi: 10.3390/ma11122368.
Highly (111)-oriented Cu pillar-bumps were bonded to highly (111)-oriented Cu films at temperatures ranging from 200 °C100 °C to 350 °C100 °C in N₂ ambient conditions. The microstructures of the bonded interfaces affected the shear strength performance of the bonded Cu joints. The bonded interfaces at 300 °C100 °C and 350 °C100 °C had far fewer voids than interfaces bonded at 200 °C100 °C and 250 °C100 °C. In addition, grain growth took place across the bonding interfaces at temperatures above 300 °C100 °C. The corresponding orientation map (OIM) showed the preferred orientation of large grown grains to be <100>. Shear tests revealed that the fracture mode was brittle for joints bonded at 200 °C100 °C, but became ductile after bonded above 300 °C100 °C. Based on the results, we found that voids and grain growth behavior play import roles in the shear strength performance of bonded Cu joints.
在氮气环境条件下，将高度（111）取向的铜柱凸块与高度（111）取向的铜膜在200℃±100℃至350℃±100℃的温度范围内进行键合。键合界面的微观结构影响了键合铜接头的剪切强度性能。在300℃±100℃和350℃±100℃下键合的界面比在200℃±100℃和250℃±100℃下键合的界面具有少得多的空隙。此外，在高于300℃±100℃的温度下，键合界面处发生了晶粒生长。相应的取向图（OIM）显示，长大的大晶粒的择优取向为<100>。剪切试验表明，在200℃±100℃下键合的接头断裂模式为脆性，但在300℃±100℃以上键合后变为韧性。基于这些结果，我们发现空隙和晶粒生长行为在键合铜接头的剪切强度性能中起着重要作用。
