Juang Jing-Ye, Lu Chia-Ling, Chen Kuan-Ju, Chen Chao-Chang A, Hsu Po-Ning, Chen Chih, Tu K N
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 30010, R.O.C, Taiwan.
Department of Mechanical Engineering, National Taiwan University of Science and Technology, Taipei, 10607, R.O.C, Taiwan.
Sci Rep. 2018 Sep 17;8(1):13910. doi: 10.1038/s41598-018-32280-x.
A vacuum-free Cu-to-Cu direct bonding by using (111)-oriented and nanotwinned Cu has been achieved. A fast bonding process occurs in 5 min under a temperature gradient between 450 and 100 °C. It is verified by grain growth across the bonded interface. To investigate the grain growth behavior, further annealing in the temperature gradient, as well as in a reversed temperature gradient, was performed. They showed similar recrystallization behavior with de-twinning. To analyze the de-twinning, we recall the classic model of annealing twin formation by Fullman and Fisher as comparison. Our case is opposite to the model of Fullman and Fisher. A mechanism of direct bonding by surface diffusion creep is proposed.
通过使用（111）取向和纳米孪晶铜实现了无真空铜到铜的直接键合。在450至100°C的温度梯度下，5分钟内即可实现快速键合过程。通过键合界面处的晶粒生长得到了验证。为了研究晶粒生长行为，在温度梯度以及反向温度梯度下进行了进一步退火。它们表现出相似的再结晶行为和孪晶消失。为了分析孪晶消失，我们回顾了Fullman和Fisher提出的经典退火孪晶形成模型作为比较。我们的情况与Fullman和Fisher的模型相反。提出了一种通过表面扩散蠕变进行直接键合的机制。
