Lu Tsan-Feng, Yen Yu-Ting, Cheng Yuan-Fu, Wang Pei-Wen, Wu YewChung Sermon
Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Materials (Basel). 2024 Jul 2;17(13):3245. doi: 10.3390/ma17133245.
Cu-Cu joints have been adopted for ultra-high density of packaging for high-end devices. However, the processing temperature must be kept relatively low, preferably below 300 °C. In this study, a novel surface modification technique, quenching treatment, was applied to achieve Cu-to-Cu direct bonding using (111)-oriented nanotwinned Cu. The quenching treatment enabled grain growth across the Cu-Cu bonding interface at 275 °C. During quenching treatment, strain energy was induced in the Cu film, resulting in a wrinkled surface morphology. To analyze the strain energy, we utilized an electron backscattered diffraction system to obtain crystallographic information and confirmed it using kernel average misorientation analysis.
铜-铜接头已被用于高端设备的超高密度封装。然而，加工温度必须保持相对较低，最好低于300°C。在本研究中，一种新型的表面改性技术——淬火处理，被应用于使用（111）取向的纳米孪晶铜实现铜-铜直接键合。淬火处理能够在275°C下使晶粒跨越铜-铜键合界面生长。在淬火处理过程中，铜膜中产生了应变能，导致表面形态出现褶皱。为了分析应变能，我们利用电子背散射衍射系统获取晶体学信息，并使用核平均取向差分析对其进行了确认。
