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利用(111)取向的纳米孪晶铜通过表面淬火处理消除铜-铜键合界面来增强异常晶粒生长。

Enhancement of Abnormal Grain Growth by Surface Quenching Treatment to Eliminate Cu-Cu Bonding Interfaces Using (111)-Oriented Nanotwinned Copper.

作者信息

Lu Tsan-Feng, Yen Yu-Ting, Cheng Yuan-Fu, Wang Pei-Wen, Wu YewChung Sermon

机构信息

Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.

出版信息

Materials (Basel). 2024 Jul 2;17(13):3245. doi: 10.3390/ma17133245.

Abstract

Cu-Cu joints have been adopted for ultra-high density of packaging for high-end devices. However, the processing temperature must be kept relatively low, preferably below 300 °C. In this study, a novel surface modification technique, quenching treatment, was applied to achieve Cu-to-Cu direct bonding using (111)-oriented nanotwinned Cu. The quenching treatment enabled grain growth across the Cu-Cu bonding interface at 275 °C. During quenching treatment, strain energy was induced in the Cu film, resulting in a wrinkled surface morphology. To analyze the strain energy, we utilized an electron backscattered diffraction system to obtain crystallographic information and confirmed it using kernel average misorientation analysis.

摘要

铜-铜接头已被用于高端设备的超高密度封装。然而,加工温度必须保持相对较低,最好低于300°C。在本研究中,一种新型的表面改性技术——淬火处理,被应用于使用(111)取向的纳米孪晶铜实现铜-铜直接键合。淬火处理能够在275°C下使晶粒跨越铜-铜键合界面生长。在淬火处理过程中,铜膜中产生了应变能,导致表面形态出现褶皱。为了分析应变能,我们利用电子背散射衍射系统获取晶体学信息,并使用核平均取向差分析对其进行了确认。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9927/11242673/1e784561b2a5/materials-17-03245-g001.jpg

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