Kim Woo Young
Department of Electronic Engineering, Jeju National University, Jeju-si, Jeju Special Self-Governing Province, 63243, Republic of Korea.
J Nanosci Nanotechnol. 2019 Apr 1;19(4):2206-2210. doi: 10.1166/jnn.2019.16012.
A ferroelectric-gated graphene field-effect transistor was fabricated with a bottom-gate structure. A ferroelectric gate dielectric was formed using the spin-coating method. Two samples were made, one with a single coating and the other with a double coating. It was observed that the data retention times of the two samples were significantly different. When comparing the surface roughness, the surface of the thin film produced by the double coating was much flatter. Based on the observation of the surface morphology, an interfacial layer composed of air was deduced as the origin of both the depolarization and short retention time. That is, when fabricating the graphene-ferroelectric memory device, the importance of the interface treatment could be confirmed. Based on these results, it is expected that a much more reliable device can be realized through surface engineering via a graphene-ferroelectric device process.
采用底栅结构制备了铁电栅控石墨烯场效应晶体管。利用旋涂法形成铁电栅介质。制备了两个样品，一个是单层涂层，另一个是双层涂层。观察到两个样品的数据保持时间有显著差异。比较表面粗糙度时，双层涂层制备的薄膜表面更平整。基于表面形貌的观察，推断由空气组成的界面层是去极化和保持时间短的根源。也就是说，在制备石墨烯-铁电存储器器件时，可以确认界面处理的重要性。基于这些结果，预计通过石墨烯-铁电器件工艺进行表面工程可以实现更可靠的器件。
