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室温下的石墨烯增强金属氧化物气体传感器:综述

Graphene-enhanced metal oxide gas sensors at room temperature: a review.

作者信息

Sun Dongjin, Luo Yifan, Debliquy Marc, Zhang Chao

机构信息

College of Mechanical Engineering, Yangzhou University, Yangzhou 225127, China.

Department of Materials Science, University of Mons, 7000 Mons, Belgium.

出版信息

Beilstein J Nanotechnol. 2018 Nov 9;9:2832-2844. doi: 10.3762/bjnano.9.264. eCollection 2018.

DOI:10.3762/bjnano.9.264
PMID:30498655
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6244217/
Abstract

Owing to the excellent sensitivity to gases, metal-oxide semiconductors (MOS) are widely used as materials for gas sensing. Usually, MOS gas sensors have some common shortages, such as relatively poor selectivity and high operating temperature. Graphene has drawn much attention as a gas sensing material in recent years because it can even work at room temperature, which reduces power consumption. However, the low sensitivity and long recovery time of the graphene-based sensors limit its further development. The combination of metal-oxide semiconductors and graphene may significantly improve the sensing performance, especially the selectivity and response/recovery rate at room temperature. In this review, we have summarized the latest progress of graphene/metal-oxide gas sensors for the detection of NO, NH, CO and some volatile organic compounds (VOCs) at room temperature. Meanwhile, the sensing performance and sensing mechanism of the sensors are discussed. The improved experimental schemes are raised and the critical research directions of graphene/metal-oxide sensors in the future are proposed.

摘要

由于对气体具有出色的敏感性,金属氧化物半导体(MOS)被广泛用作气体传感材料。通常,MOS气体传感器存在一些常见的缺点,例如选择性相对较差和工作温度较高。近年来,石墨烯作为一种气体传感材料备受关注,因为它甚至可以在室温下工作,这降低了功耗。然而,基于石墨烯的传感器的低灵敏度和长恢复时间限制了其进一步发展。金属氧化物半导体与石墨烯的结合可能会显著提高传感性能,特别是在室温下的选择性和响应/恢复速率。在这篇综述中,我们总结了石墨烯/金属氧化物气体传感器在室温下检测NO、NH、CO和一些挥发性有机化合物(VOCs)的最新进展。同时,讨论了传感器的传感性能和传感机制。提出了改进的实验方案,并给出了未来石墨烯/金属氧化物传感器的关键研究方向。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1aad/6244217/31254a12fde5/Beilstein_J_Nanotechnol-09-2832-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1aad/6244217/0570f71dcf24/Beilstein_J_Nanotechnol-09-2832-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1aad/6244217/3ad790886657/Beilstein_J_Nanotechnol-09-2832-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1aad/6244217/b46b0a06144c/Beilstein_J_Nanotechnol-09-2832-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1aad/6244217/732c37da2646/Beilstein_J_Nanotechnol-09-2832-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1aad/6244217/31254a12fde5/Beilstein_J_Nanotechnol-09-2832-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1aad/6244217/0570f71dcf24/Beilstein_J_Nanotechnol-09-2832-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1aad/6244217/3ad790886657/Beilstein_J_Nanotechnol-09-2832-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1aad/6244217/b46b0a06144c/Beilstein_J_Nanotechnol-09-2832-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1aad/6244217/732c37da2646/Beilstein_J_Nanotechnol-09-2832-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1aad/6244217/31254a12fde5/Beilstein_J_Nanotechnol-09-2832-g006.jpg

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