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基于 HfO/AlO 的恒温突触忆阻器中的神经元动力学,具有低功耗和均匀的电阻开关特性。

Neuronal dynamics in HfO/AlO-based homeothermic synaptic memristors with low-power and homogeneous resistive switching.

机构信息

School of Electronics Engineering, Chungbuk National University, Cheongju 28644, South Korea.

出版信息

Nanoscale. 2018 Dec 20;11(1):237-245. doi: 10.1039/c8nr06694a.

DOI:10.1039/c8nr06694a
PMID:30534752
Abstract

We studied the pseudo-homeothermic synaptic behaviors by integrating complimentary metal-oxide-semiconductor-compatible materials (hafnium oxide, aluminum oxide, and silicon substrate). A wide range of temperatures, from 25 °C up to 145 °C, in neuronal dynamics was achieved owing to the homeothermic properties and the possibility of spike-induced synaptic behaviors was demonstrated, both presenting critical milestones for the use of emerging memristor-type neuromorphic computing systems in the near future. Biological synaptic behaviors, such as long-term potentiation, long-term depression, and spike-timing-dependent plasticity, are developed systematically, and comprehensive neural network analysis is used for temperature changes and to conform spike-induced neuronal dynamics, providing a new research regime of neurocomputing for potentially harsh environments to overcome the self-heating issue in neuromorphic chips.

摘要

我们通过整合互补金属氧化物半导体兼容材料(氧化铪、氧化铝和硅衬底)研究了拟恒温突触行为。由于恒温特性和展示出尖峰诱导突触行为的可能性,实现了从 25°C 到 145°C 的神经元动力学的宽温度范围,这两者都为新兴忆阻器型神经形态计算系统在不久的将来的应用提供了关键的里程碑。生物突触行为,如长时程增强、长时程抑制和尖峰时间依赖性可塑性,被系统地开发,并且综合神经网络分析用于温度变化并确认尖峰诱导的神经元动力学,为潜在恶劣环境中的神经计算提供了新的研究模式,以克服神经形态芯片中的自加热问题。

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