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纳米级忆阻器器件作为神经形态系统中的突触。

Nanoscale memristor device as synapse in neuromorphic systems.

机构信息

Department of Electrical Engineering and Computer Science, University of Michigan, Michigan 48109, USA.

出版信息

Nano Lett. 2010 Apr 14;10(4):1297-301. doi: 10.1021/nl904092h.

Abstract

A memristor is a two-terminal electronic device whose conductance can be precisely modulated by charge or flux through it. Here we experimentally demonstrate a nanoscale silicon-based memristor device and show that a hybrid system composed of complementary metal-oxide semiconductor neurons and memristor synapses can support important synaptic functions such as spike timing dependent plasticity. Using memristors as synapses in neuromorphic circuits can potentially offer both high connectivity and high density required for efficient computing.

摘要

忆阻器是一种二端电子器件,其电导可以通过流经它的电荷或磁通来精确调节。在这里,我们实验演示了一种基于纳米尺度硅的忆阻器器件,并表明由互补金属氧化物半导体神经元和忆阻器突触组成的混合系统可以支持重要的突触功能,如依赖于尖峰时间的可塑性。在神经形态电路中使用忆阻器作为突触,可以提供高效计算所需的高连接性和高密度。

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