Xiao Wen, Yang Yang, Chi Xiao, Liu Binghai, Du Yonghua, Yang Ping, Herng Tun Seng, Gao Daqiang, Song Wendong, Feng Yuan Ping, Rusydi Andrivo, Ding Jun
Department of Materials Science and Engineering , National University of Singapore , 9 Engineering Drive 1 , Singapore 117575 , Singapore.
College of Electronic Science and Technology , Shenzhen University , Shenzhen 518060 , P. R. China.
ACS Appl Mater Interfaces. 2019 Jan 9;11(1):1049-1056. doi: 10.1021/acsami.8b17902. Epub 2018 Dec 28.
Herein, a low-temperature thermal decomposition method is utilized to grow new stable tetragonal FeO-based thick ferrite films. The tetragonal FeO-based film possesses high saturation magnetization of ∼800 emu/cm. Doping with approximately 10% Co results in a high-energy product of ∼10.9 MGOe with perpendicular magnetocrystalline anisotropy, whereas doping with Ni increases electrical resistivity by a factor of 6 and retains excellent soft magnetic properties (high saturation magnetization and low coercivity). A combined experimental and first-principles study reveals that carbon interstitials (C) and oxygen vacancies (V) form C-V pairs which stabilize the tetragonal phase and enhance saturation magnetization. The magnetization enhancement is further attributed to local ferromagnetic coupling between Fe and Fe induced by C-V pairs in a tetragonal spinel ferrite lattice.
在此，采用低温热分解法生长新型稳定的四方相FeO基厚铁氧体薄膜。四方相FeO基薄膜具有约800 emu/cm的高饱和磁化强度。掺杂约10%的Co会产生具有垂直磁晶各向异性的约10.9 MGOe的高能量积，而掺杂Ni会使电阻率提高6倍并保留优异的软磁性能（高饱和磁化强度和低矫顽力）。一项结合实验和第一性原理的研究表明，碳间隙原子（C）和氧空位（V）形成C-V对，这些对稳定了四方相并增强了饱和磁化强度。磁化强度的增强进一步归因于四方尖晶石铁氧体晶格中C-V对诱导的Fe与Fe之间的局域铁磁耦合。
