Zhou Dandan, Wang Zhizhen, Song Zhen, Wang Feixiong, Zhang Shiyou, Liu Quanlin
The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering , University of Science and Technology Beijing , Beijing 100083 , China.
Inorg Chem. 2019 Jan 22;58(2):1684-1689. doi: 10.1021/acs.inorgchem.8b03270. Epub 2019 Jan 7.
Long persistence phosphors with high emitting intensity are promising materials for safety signage and energy storage applications. Herein, an improved persistent luminescence of YAlGaO phosphor by co-doping Ce, Yb, and B is achieved using conventional solid-state reaction. On one hand, the incorporation of HBO can improve the crystallinity; on the other hand, B can replace Al/Ga in tetrahedral sites in the host lattice, causing lattice contraction and modifying the trap depth and density. It is found that adding B forms a much deeper trap with ∼1.10 eV depth. In addition, the density of the electron trap can also be dramatically increased compared to the sample without B. The charging process for persistent luminescence is demonstrated by comparing the photoluminescence excitation spectrum with the thermoluminescence excitation spectrum. The persistence luminescence mechanism is given by a visual energy level diagram on the basis of the vacuum referred binding energy scheme of YAlGaO.
具有高发射强度的长余辉磷光体是安全标识和能量存储应用的有前途的材料。在此，通过传统的固态反应实现了通过共掺杂Ce、Yb和B来提高YAlGaO磷光体的持续发光性能。一方面，HBO的掺入可以提高结晶度；另一方面，B可以取代主体晶格中四面体位置的Al/Ga，导致晶格收缩并改变陷阱深度和密度。发现添加B形成了一个深度约为1.10 eV的更深陷阱。此外，与不含B的样品相比，电子陷阱的密度也可以显著增加。通过比较光致发光激发光谱和热释光激发光谱来证明持续发光的充电过程。基于YAlGaO的真空参考结合能方案，通过可视化能级图给出了持续发光机制。
