Graduate School of Human and Environmental Studies , Kyoto University , Yoshida-nihonmatsu-cho , Sakyo-ku, Kyoto 606-8501 , Japan.
ACS Appl Mater Interfaces. 2018 Jun 20;10(24):20652-20660. doi: 10.1021/acsami.8b02758. Epub 2018 Jun 5.
The YAlGaO:Ce-Cr compound is one of the brightest persistent phosphors, but its persistent luminescence duration is not so long because of the relatively shallow Cr electron trap. To compare the vacuum referred binding energy of the electron trapping state by Cr and lanthanide ions, we selected Yb as a deeper electron trapping center. The YAlGaO:Ce-Yb phosphors show Ce:5d → 4f green persistent luminescence after blue light excitation. The formation of Yb was confirmed by the increased intensity of absorption due to Yb:4f-5d at 585 nm during the charging process. This result indicates that the Yb ions act as electron traps by capturing an electron. From the thermoluminescence glow curves, it was found that the Yb trap makes a much deeper electron trap with a 1.01 eV depth than the Cr electron trap with a 0.81 eV depth. This deeper Yb trap provides a much slower detrapping rate of filled electron traps than the Cr-codoped persistent phosphor. In addition, by preparing transparent ceramics and optimizing Ce and Yb concentrations, the YAlGaO:Ce(0.2%)-Yb(0.1%) as-made transparent ceramic phosphor showed super-long persistent luminescence for over 138.8 h after blue light charging.
YAlGaO:Ce-Cr 化合物是最亮的长余辉荧光粉之一,但由于 Cr 电子陷阱较浅,其长余辉持续时间并不长。为了比较 Cr 和镧系离子电子俘获态的真空参考结合能,我们选择 Yb 作为更深的电子俘获中心。YAlGaO:Ce-Yb 荧光粉在蓝光激发后显示 Ce:5d → 4f 绿光长余辉。在充电过程中,由于 Yb:4f-5d 在 585nm 处的吸收增强,证实了 Yb 的形成。这一结果表明,Yb 离子通过捕获电子充当电子陷阱。从热致发光发光曲线可以发现,Yb 陷阱比 Cr 电子陷阱(深度为 0.81eV)形成更深的电子陷阱,深度为 1.01eV。这种更深的 Yb 陷阱提供了比 Cr 共掺长余辉荧光粉慢得多的填充电子陷阱的脱陷阱速率。此外,通过制备透明陶瓷并优化 Ce 和 Yb 浓度,YAlGaO:Ce(0.2%)-Yb(0.1%) 制得的透明陶瓷荧光粉在蓝光充电后超过 138.8 小时表现出超长的长余辉。