Graduate School of Convergence Science and Technology, and Inter-University Semiconductor Research Center , Seoul National University , 1 Gwanak-ro , Gwanak-gu, Seoul 08826 , Republic of Korea.
School of Mechanical and Aerospace Engineering, and Global Frontier Center for Multiscale Energy Systems , Seoul National University , 1 Gwanak-ro , Gwanak-gu, Seoul 08826 , Republic of Korea.
ACS Appl Mater Interfaces. 2019 Feb 13;11(6):6276-6282. doi: 10.1021/acsami.8b16303. Epub 2019 Jan 30.
We demonstrate that hole injection from a top electrode composed of Au nanoparticles (AuNPs) capped with a thick Au layer into an underlying organic semiconductor, N, N'-diphenyl- N, N'-bis-[4-(phenyl- m-tolyl-amino)-phenyl]-biphenyl-4,4'-diamine (DNTPD), is significantly enhanced compared to that in a control device whose top electrode is composed entirely of a thick Au layer. The fabrication of this organic hole-only device with the AuNP electrode is made possible by dry, room-temperature distribution of AuNPs onto DNTPD using a spark-discharge aerosol technique capable of varying the average diameter ( D̅) of the AuNPs. The enhancement in hole injection is found to increase with decreasing D̅, with the current density of a device with D̅ = 1.1 nm being more than 3 orders of magnitude larger than that of the control device. Intensity-modulated photocurrent measurements show that the built-in potentials of the devices with the AuNP electrode are smaller than that of the control device by as much as 0.68 V, indicating that the enhanced hole injection originates from the increased work functions of these devices, which in turn decreases the hole injection barrier heights. X-ray photoelectron spectroscopy reveals that the increased work functions of the AuNP electrodes are due to surface oxidation of the AuNPs resulting in AuN and AuN. The degree of oxidation of the AuNPs increases with decreasing D̅, consistent with the D̅-dependencies of the hole injection enhancement and the built-in potential reduction.
我们证明,与完全由厚 Au 层组成的顶电极的对照装置相比,由 Au 纳米粒子 (AuNPs) 组成的顶电极(其顶部覆盖有厚 Au 层)注入到下层有机半导体 N,N'-二苯基-N,N'-双-[4-(苯基-m-甲苯基-氨基)-苯基]-联苯-4,4'-二胺 (DNTPD) 中的空穴注入显著增强。通过使用能够改变 AuNPs 平均直径 (D̅) 的火花放电气溶胶技术,将 AuNP 干涂到 DNTPD 上,从而制造出具有 AuNP 电极的这种有机空穴器件。发现空穴注入的增强随 D̅ 的减小而增加,具有 D̅ = 1.1nm 的器件的电流密度比对照装置大 3 个数量级以上。强度调制光电流测量表明,具有 AuNP 电极的器件的内置电势比对照装置小 0.68V,这表明增强的空穴注入源于这些器件的功函数增加,从而降低了空穴注入势垒高度。X 射线光电子能谱揭示了 AuNP 电极功函数的增加是由于 AuNPs 的表面氧化导致 AuN 和 AuN 的形成。AuNPs 的氧化程度随 D̅ 的减小而增加,与空穴注入增强和内置电势降低的 D̅ 依赖性一致。