College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, P. R. China.
Hefei National Laboratory of Physical Sciences at the Microscale (HFNL), Department of Chemistry, Laboratory of Nanomaterials for Energy Conversion (LNEC), Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China (USTC), Hefei, Anhui, 230026, P. R. China.
Small. 2019 Feb;15(7):e1805431. doi: 10.1002/smll.201805431. Epub 2019 Jan 17.
It is desirable to imitate synaptic functionality to break through the memory wall in traditional von Neumann architecture. Modulating heterosynaptic plasticity between pre- and postneurons by another modulatory interneuron ensures the computing system to display more complicated functions. Optoelectronic devices facilitate the inspiration for high-performance artificial heterosynaptic systems. Nevertheless, the utilization of near-infrared (NIR) irradiation to act as a modulatory terminal for heterosynaptic plasticity emulation has not yet been realized. Here, an NIR resistive random access memory (RRAM) is reported, based on quasiplane MoSe /Bi Se heterostructure in which the anomalous NIR threshold switching and NIR reset operation are realized. Furthermore, it is shown that such an NIR irradiation can be employed as a modulatory terminal to emulate heterosynaptic plasticity. The reconfigurable 2D image recognition is also demonstrated by an RRAM crossbar array. NIR annihilation effect in quasiplane MoSe /Bi Se nanosheets may open a path toward optical-modulated in-memory computing and artificial retinal prostheses.
人们希望模仿突触功能，以突破传统冯·诺依曼架构中的存储墙。通过另一个调制中间神经元来调节前神经元和后神经元之间的异突触可塑性，可确保计算系统表现出更复杂的功能。光电设备为高性能人工异突触系统的灵感提供了帮助。然而，利用近红外（NIR）辐照作为异突触可塑性模拟的调制终端尚未实现。在此，报告了一种基于准平面 MoSe2/Bi2Se3 异质结构的 NIR 电阻式随机存取存储器（RRAM），其中实现了异常 NIR 阈值切换和 NIR 重置操作。此外，还表明这种 NIR 辐照可被用作模拟异突触可塑性的调制终端。通过 RRAM 交叉阵列还演示了可重构的 2D 图像识别。准平面 MoSe2/Bi2Se3 纳米片中的 NIR 湮灭效应可能为光学调制的内存计算和人工视网膜假体开辟了一条道路。
