六方相 MoSe 纳米片中 Ag 丝诱导的非易失性阻变存储行为。
Ag filament induced nonvolatile resistive switching memory behaviour in hexagonal MoSe nanosheets.
机构信息
School of Materials Science and Engineering, Yancheng Institute of Technology, Yancheng 224051, China.
School of Physical Science and Technology, Southwest Jiaotong University, Chengdu, Sichuan 610031, China.
出版信息
J Colloid Interface Sci. 2017 Nov 1;505:148-153. doi: 10.1016/j.jcis.2017.05.082. Epub 2017 May 25.
In this work, hexagonal MoSe nanosheets were prepared by hydrothermal process. Next, the resistive switching memory behaviour of single MoSe nanosheets was further investigated. We observed that MoSe nanosheets based memory device show reproducible and stable bipolar resistive switching memory characteristics. Through the analysis for conductive mechanism, the formation and rupture of nanoscale Ag filament inside the MoSe nanosheets is suggested to explain the memory behaviour.
在这项工作中，通过水热法制备了六方相 MoSe 纳米片。接着，进一步研究了单根 MoSe 纳米片的电阻开关特性。我们发现基于 MoSe 纳米片的忆阻器具有可重复且稳定的双极性电阻开关特性。通过对导电机理的分析，提出了 MoSe 纳米片中纳米尺度 Ag 丝的形成和断裂来解释其忆阻行为。
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