Micro- and Nano-technology Research Center, State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China.
Nanotechnology. 2019 May 3;30(18):185303. doi: 10.1088/1361-6528/ab0063. Epub 2019 Jan 21.
A stable and uniform electric field is to be generated even though a large mechanical deformation is the primary criterion for a transparent conductive film. This study proposes a protective integrated transparent conductive film (PITCF) including indium tin oxide (ITO), a silver nanowire (Ag NW) network, and a protective polydimethylsiloxane (PDMS) layer. A firmly bonding process of ITO/Ag NW/PDMS is established to avoid the failure of Ag NW to be oxidized by interlayer residual air or wrapped by liquid PDMS. Besides the good optical transparency, haze, and electrical conductivity as the only ITO film, the developed PITCF exhibits excellent bending resistance and mechanical stability. The ITO rupture fragments after bending deformation are firmly interconnected by the constrained Ag NWs. Even though the PITCF is bended more than 1000 cycles at a 6.5 mm bending distance, the changes in electrical resistance of PITCF are below 9.7%. Finally, an electroluminescent device with high bending resistance and uniform and high luminance is developed based on the designed PITCF.
尽管大机械变形是透明导电薄膜的主要标准，但仍需要生成稳定且均匀的电场。本研究提出了一种包括铟锡氧化物（ITO）、银纳米线（Ag NW）网络和保护用聚二甲基硅氧烷（PDMS）层的保护集成透明导电膜（PITCF）。建立了ITO/Ag NW/PDMS 的牢固键合工艺，以避免 Ag NW 被层间残留空气氧化或被液态 PDMS 包裹。与仅具有 ITO 膜的良好光学透明度、雾度和导电性相比，所开发的 PITCF 表现出优异的弯曲阻力和机械稳定性。ITO 破裂碎片在弯曲变形后通过受约束的 Ag NW 牢固地相互连接。即使在以 6.5 毫米弯曲距离弯曲超过 1000 次后，PITCF 的电阻变化仍低于 9.7%。最后，基于设计的 PITCF 开发了具有高弯曲阻力、均匀和高亮度的电致发光器件。
