Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, No. 38 Tongyan Road, Haihe Education Park, Tianjin 300350, People's Republic of China. Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, No. 38 Tongyan Road, Haihe Education Park, Tianjin 300350, People's Republic of China.
Nanotechnology. 2019 May 17;30(20):202002. doi: 10.1088/1361-6528/ab00a4. Epub 2019 Jan 22.
Gate insulators play a role as important as that of the semiconductor in high performance OFETs, with a high on/off current ratio, low hysteresis, and device stability. The essential requirements for gate dielectrics include high capacitance, high dielectric breakdown strength, solution-processibility, and flexibility. In this paper we review progress in recent years in developing high-k gate polymeric insulators for modern organic electronic applications. After a general introduction to OFETs, three types of high-k polymeric gate insulating materials are enumerated in achieving high-quality OFETs, including polymer gate insulators, polymer-inorganic gate composites or bilayers, and ion gel electrolytes. Especially, we emphasize the significance, implementation and development of high-k polymeric gate insulators used in OFETs for future low voltage operated and flexible electronics. Finally, a brief summary and outlook are presented.
栅极绝缘体在高性能 OFET 中的作用与半导体一样重要，具有高导通/关断电流比、低迟滞和器件稳定性。栅极电介质的基本要求包括高电容、高介电击穿强度、溶液加工性和柔韧性。在本文中，我们综述了近年来为现代有机电子应用开发高 k 栅聚合物绝缘体的进展。在对 OFET 进行一般性介绍之后，列举了三种类型的高 k 聚合物栅极绝缘材料，以实现高质量的 OFET，包括聚合物栅极绝缘体、聚合物-无机栅复合材料或双层以及离子凝胶电解质。特别是，我们强调了高 k 聚合物栅极绝缘体在用于未来低压操作和柔性电子的 OFET 中的重要性、实施和发展。最后，给出了简要的总结和展望。
