Duan Xiaoling, Zhang Jincheng, Chen Jiabo, Zhang Tao, Zhu Jiaduo, Lin Zhiyu, Hao Yue
Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an 710071, China.
Micromachines (Basel). 2019 Jan 21;10(1):75. doi: 10.3390/mi10010075.
A drain engineered InGaN heterostructure tunnel field effect transistor (TFET) is proposed and investigated by Silvaco Atlas simulation. This structure uses an additional metal on the drain region to modulate the energy band near the drain/channel interface in the drain regions, and increase the tunneling barrier for the flow of holes from the conduction band of the drain to the valence band of the channel region under negative gate bias for n-TFET, which induces the ambipolar current being reduced from 1.93 × 10 to 1.46 × 10 A/μm. In addition, polar InGaN heterostructure TFET having a polarization effect can adjust the energy band structure and achieve steep interband tunneling. The average subthreshold swing of the polar drain engineered heterostructure TFET (DE-HTFET) is reduced by 53.3% compared to that of the nonpolar DE-HTFET. Furthermore, I increases 100% from 137 mA/mm of nonpolar DE-HTFET to 274 mA/mm of polar DE-HTFET.
提出了一种漏极工程化的氮化铟镓（InGaN）异质结构隧道场效应晶体管（TFET），并通过Silvaco Atlas模拟进行了研究。这种结构在漏极区域使用额外的金属来调制漏极区域中漏极/沟道界面附近的能带，并在n型TFET的负栅极偏置下增加从漏极导带流向沟道区域价带的空穴的隧穿势垒，这使得双极性电流从1.93×10降至1.46×10 A/μm。此外，具有极化效应的极性InGaN异质结构TFET可以调整能带结构并实现陡峭的带间隧穿。与非极性漏极工程化异质结构TFET（DE-HTFET）相比，极性漏极工程化异质结构TFET的平均亚阈值摆幅降低了53.3%。此外，电流从非极性DE-HTFET的137 mA/mm增加到极性DE-HTFET的274 mA/mm，增幅为100%。
