采用直接带间隧穿的高电流锗沟道异质结隧道场效应晶体管。
High On-Current Ge-Channel Heterojunction Tunnel Field-Effect Transistor Using Direct Band-to-Band Tunneling.
作者信息
Kim Garam, Lee Jaehong, Kim Jang Hyun, Kim Sangwan
机构信息
Department of Electrical and Computer Engineering (ECE), Seoul National University, Gwanak 599, Gwanak-gu, Seoul 151-742, Korea.
Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Korea.
出版信息
Micromachines (Basel). 2019 Jan 24;10(2):77. doi: 10.3390/mi10020077.
The main challenge for tunnel field-effect transistors (TFETs) is achieving high on-current (on) and low subthreshold swing (SS) with reasonable ambipolar characteristics. In order to address these challenges, Ge-channel heterostructure TFET with Si source and drain region is proposed, and its electrical characteristics are compared to other TFET structures. From two-dimensional (2-D) device simulation results, it is confirmed that the Si/Ge heterostructure source junction improves on and SS characteristics by using the direct band-to-band tunneling current. Furthermore, the proposed structure shows suppressed ambipolar behavior since the Ge/Si heterostructure is used at the drain junction.
隧道场效应晶体管（TFET）面临的主要挑战是在具有合理双极性特性的情况下实现高导通电流（on）和低亚阈值摆幅（SS）。为了应对这些挑战，提出了一种具有硅源极和漏极区域的锗沟道异质结构TFET，并将其电学特性与其他TFET结构进行了比较。从二维（2-D）器件模拟结果可以确认，硅/锗异质结构源结通过利用直接带间隧穿电流改善了导通和SS特性。此外，由于在漏极结处使用了锗/硅异质结构，所提出的结构显示出双极性行为受到抑制。
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