Wang Zhenhai, Gui Lijiang, Han Danhong, Xu Zhuang, Han Li, Xu Shengyong
Key Laboratory for the Physics & Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing, 100871, China.
Department of Micro-Nano Fabrication Technology, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, 100190, China.
Nanoscale Res Lett. 2019 Jan 22;14(1):31. doi: 10.1186/s11671-018-2821-x.
Electron beams (e-beams) have been applied as detecting probes and clean energy sources in many applications. In this work, we investigated several approaches for measurement and estimation of the range and distribution of local temperatures on a subject surface under irradiation of nano-microscale e-beams. We showed that a high-intensity e-beam with current density of 10 A/cm could result in vaporization of solid Si and Au materials in seconds, with a local surface temperature higher than 3000 K. With a lower beam intensity to 10 A/cm, e-beams could introduce local surface temperature in the range of 1000-2000 K shortly, causing local melting in metallic nanowires and Cr, Pt, and Pd thin films, and phase transition in metallic Mg-B films. We demonstrated that thin film thermocouples on a freestanding SiN window were capable of detecting peaked local surface temperatures up to 2000 K and stable, and temperatures in a lower range with a high precision. We discussed the distribution of surface temperatures under e-beams, thermal dissipation of thick substrate, and a small converting ratio from the high kinetic energy of e-beam to the surface heat. The results may offer some clues for novel applications of e-beams.
电子束（e束）已在许多应用中用作检测探针和清洁能源。在这项工作中，我们研究了几种方法，用于测量和估计纳米微尺度电子束辐照下物体表面局部温度的范围和分布。我们表明，电流密度为10 A/cm的高强度电子束可在数秒内导致固态硅和金材料汽化，局部表面温度高于3000 K。当束强度降低到10 A/cm时，电子束可在短时间内使局部表面温度达到1000 - 2000 K，导致金属纳米线以及铬、铂和钯薄膜发生局部熔化，金属镁硼薄膜发生相变。我们证明，独立氮化硅窗口上的薄膜热电偶能够检测高达2000 K的峰值局部表面温度，并且能够高精度地检测较低范围内的稳定温度。我们讨论了电子束下表面温度的分布、厚基板的热耗散以及电子束高动能向表面热的小转换率。这些结果可能为电子束的新应用提供一些线索。
