Lv Yangyang, Dong Yu, Lu Dachuan, Tian Wanghao, Xu Zuyu, Chen Wei, Zhou Xianjing, Yuan Jie, Jin Kui, Bao Song, Li Shichao, Wen Jinsheng, Chibotaru Liviu F, Schwarz Tobias, Kleiner Reinhold, Koelle Dieter, Li Jun, Wang Huabing, Wu Peiheng
Research Institute of Superconductor Electronics, Nanjing University, Nanjing, 210023, China.
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
Sci Rep. 2019 Jan 24;9(1):664. doi: 10.1038/s41598-018-37152-y.
The study of transverse resistance of superconductors is essential to understand the transition to superconductivity. Here, we investigated the in-plane transverse resistance of BaKFeAs superconductors, based on ultra-thin micro-bridges fabricated from optimally doped single crystals. An anomalous transverse resistance was found at temperatures around the superconducting transition, although magnetic order or structure distortion are absent in the optimal doping case. With the substitution of magnetic and nonmagnetic impurities into the superconducting layer, the anomalous transverse resistance phenomenon is dramatically enhanced. We find that anisotropic scattering or the superconducting electronic nematic state related with the superconducting transition may contribute to this phenomenon.
对超导体横向电阻的研究对于理解超导转变至关重要。在此，我们基于由最佳掺杂单晶制成的超薄微桥，研究了BaKFeAs超导体的面内横向电阻。在超导转变温度附近发现了异常横向电阻，尽管在最佳掺杂情况下不存在磁有序或结构畸变。随着磁性和非磁性杂质替代到超导层中，异常横向电阻现象显著增强。我们发现与超导转变相关的各向异性散射或超导电子向列相态可能导致了这一现象。
