Catalonia Institute for Energy Research - IREC , Sant Adrià del Besòs, 08930 Barcelona , Spain.
Departament d'Electronica , Universitat de Barcelona , 08028 Barcelona , Spain.
ACS Appl Mater Interfaces. 2019 Feb 20;11(7):6918-6926. doi: 10.1021/acsami.8b17622. Epub 2019 Feb 11.
Tin disulfide (SnS) is attracting significant interest because of the abundance of its elements and its excellent optoelectronic properties in part related to its layered structure. In this work, we specify the preparation of ultrathin SnS nanoplates (NPLs) through a hot-injection solution-based process. Subsequently, Pt was grown on their surface via in situ reduction of a Pt salt. The photoelectrochemical (PEC) performance of such nanoheterostructures as photoanode toward water oxidation was tested afterwards. Optimized SnS-Pt photoanodes provided significantly higher photocurrent densities than bare SnS and SnS-based photoanodes of previously reported study. Mott-Schottky analysis and PEC impedance spectroscopy (PEIS) were used to analyze in more detail the effect of Pt on the PEC performance. From these analyses, we attribute the enhanced activity of SnS-Pt photoanodes reported here to a combination of the very thin SnS NPLs and the proper electronic contact between Pt nanoparticles (NPs) and SnS.
二硫化锡 (SnS) 因其元素丰富，且具有优良的光电性能而备受关注，其部分光电性能与层状结构有关。在这项工作中，我们通过热注射溶液法制备了超薄 SnS 纳米片 (NPL)。随后，通过 Pt 盐的原位还原在其表面生长出 Pt。随后，我们测试了这种纳米异质结构作为光阳极在水氧化方面的光电化学 (PEC) 性能。与裸 SnS 和以前报道的基于 SnS 的光阳极相比，优化后的 SnS-Pt 光阳极提供了更高的光电流密度。Mott-Schottky 分析和 PEC 阻抗谱 (PEIS) 被用于更详细地分析 Pt 对 PEC 性能的影响。从这些分析中，我们将这里报道的 SnS-Pt 光阳极活性增强归因于非常薄的 SnS NPL 和 Pt 纳米颗粒 (NPs) 与 SnS 之间的适当电子接触的结合。
