Deng Shunlan, Chen Yi, Li Qi, Sun Jie, Lei Zhibin, Hu Peng, Liu Zong-Huai, He Xuexia, Ma Renzhi
Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Shaanxi 710119, China.
School of Physics, Northwest University, Shaanxi 710069, China.
Nanoscale. 2022 Oct 6;14(38):14097-14105. doi: 10.1039/d2nr03201e.
Tin sulfide (SnS) has attracted growing attention due to its environmental friendliness, tunable band gap and potential applications for high-sensitivity photodetectors. However, the low responsivity and slow response speed severely hinder its further applications. In this work, SnS nanowalls have been successfully fabricated on FTO substrates by a facile hydrothermal approach. The prepared SnS nanowalls were used as a photoanode material for photoelectrochemical (PEC)-type photodetectors. The SnS based PEC-type photodetectors exhibit excellent photocurrent density (39.06 μA cm), responsivity (1460 μA W), long-term cycling stability and self-powered behavior. The responsivity of the detector is higher than that of most reported SnS based PEC-type photodetectors and even some SnS based photoconductive photodetectors. The high responsivity and self-powered behavior enable the extended potential applications of SnS in PEC-type photodetectors.
硫化锡（SnS）因其环境友好性、可调节的带隙以及在高灵敏度光电探测器中的潜在应用而受到越来越多的关注。然而，其低响应度和缓慢的响应速度严重阻碍了它的进一步应用。在这项工作中，通过简便的水热法在FTO衬底上成功制备了SnS纳米墙。所制备的SnS纳米墙被用作光电化学（PEC）型光电探测器的光阳极材料。基于SnS的PEC型光电探测器表现出优异的光电流密度（39.06 μA/cm²）、响应度（1460 μA/W）、长期循环稳定性和自供电特性。该探测器的响应度高于大多数已报道的基于SnS的PEC型光电探测器，甚至高于一些基于SnS的光电导型光电探测器。高响应度和自供电特性使得SnS在PEC型光电探测器中具有更广泛的潜在应用。
