Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Electronic Science and Technology and college of optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China.
Nanoscale. 2019 Feb 7;11(6):2637-2643. doi: 10.1039/c9nr00058e.
In this work, 0-dimensional (0D) CsPbBr3 QDs were integrated with 2D bismuthene having ultrafast carrier mobility, to obtain a 0D/2D nanohybrid. Moreover, an excellent charge transfer efficiency (0.53) and an appreciable quenching constant of 2.3 × 105 M-1 were observed. Tuning the ratio of bismuthene in the Bi/perovskite nanohybrid achieved the quantified control of charge transfer efficiency and quenching performance at the interface.
在这项工作中，将具有超快载流子迁移率的二维二碲化铋与零维（0D）CsPbBr3 QDs 集成，得到 0D/2D 纳米杂化材料。此外，观察到了优异的电荷转移效率（0.53）和可衡量的猝灭常数 2.3×105 M-1。通过调整 Bi/钙钛矿纳米杂化材料中二维二碲化铋的比例，实现了对界面处电荷转移效率和猝灭性能的量化控制。
