Jung Sujeong, Kim Jae Ho, Choi Jin Woo, Kang Jae-Wook, Jin Sung-Ho, Kang Youngho, Song Myungkwan
Surface Technology Division, Korea Institute of Materials Science (KIMS), 797 Changwondae-ro, Sungsan-Gu, Gyeongsangnam-do, Changwon 51508, Korea.
Department of Flexible and Printable Electronics, Polymer Materials Fusion Research Center, Chonbuk National University, Jeonju 54896, Korea.
Nanomaterials (Basel). 2020 Apr 9;10(4):710. doi: 10.3390/nano10040710.
We determine the influence of substitutional defects on perovskite quantum dots through experimental and theoretical investigations. Substitutional defects were introduced by trivalent dopants (In, Sb, and Bi) in CsPbBr by ligand-assisted reprecipitation. We show that the photoluminescence (PL) emission peak shifts toward shorter wavelengths when doping concentrations are increased. Trivalent metal-doped CsPbBr enhanced the PL quantum yield (~10%) and air stability (over 10 days). Our findings provide new insights into the influence of substitutional defects on substituted CsPbBr that underpin their physical properties.
我们通过实验和理论研究确定了替代缺陷对钙钛矿量子点的影响。通过配体辅助再沉淀法,用三价掺杂剂(铟、锑和铋)在CsPbBr中引入替代缺陷。我们发现,当掺杂浓度增加时,光致发光(PL)发射峰向更短波长移动。三价金属掺杂的CsPbBr提高了PL量子产率(约10%)和空气稳定性(超过10天)。我们的研究结果为替代缺陷对替代CsPbBr的影响提供了新的见解,这些见解支撑了它们的物理性质。