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用于磁隧道结快速寿命测试的微结构设计。

Microstructure Design for Fast Lifetime Measurements of Magnetic Tunneling Junctions.

机构信息

Fachbereich Physik and Forschungszentrum OPTIMAS, Technische Universität Kaiserslautern, 67663 Kaiserslautern, Germany.

Sensitec GmbH, 55130 Mainz, Germany.

出版信息

Sensors (Basel). 2019 Jan 30;19(3):583. doi: 10.3390/s19030583.

DOI:10.3390/s19030583
PMID:30704095
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6387249/
Abstract

The estimation of the reliability of magnetic field sensors against failure is a critical point concerning their application for industrial purposes. Due to the physical stochastic nature of the failure events, this can only be done by means of a statistical approach which is extremely time consuming and prevents a continuous observation of the production. Here, we present a novel microstructure design for a parallel measurement of the lifetime characteristics of a sensor population. By making use of two alternative designs and the Weibull statistical distribution function, we are able to measure the lifetime characteristics of a CoFeB/MgO/CoFeB tunneling junction population. The main parameters governing the time evolution of the failure rate are estimated and discussed and the suitability of the microstructure for highly reliable sensor application is proven.

摘要

磁场传感器失效可靠性的评估是其应用于工业目的的一个关键点。由于失效事件的物理随机性,这只能通过极其耗时的统计方法来完成,并且会妨碍对生产的连续观察。在这里,我们提出了一种用于并行测量传感器群体寿命特性的新型微结构设计。通过利用两种替代设计和威布尔统计分布函数,我们能够测量 CoFeB/MgO/CoFeB 隧道结群体的寿命特性。估计和讨论了控制失效率时间演化的主要参数,并证明了该微结构在高可靠性传感器应用中的适用性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5f1f/6387249/f9e513552174/sensors-19-00583-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5f1f/6387249/2107c22727ac/sensors-19-00583-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5f1f/6387249/f81e9c480d7e/sensors-19-00583-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5f1f/6387249/41e7a2f5e6e0/sensors-19-00583-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5f1f/6387249/f9e513552174/sensors-19-00583-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5f1f/6387249/2107c22727ac/sensors-19-00583-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5f1f/6387249/f81e9c480d7e/sensors-19-00583-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5f1f/6387249/41e7a2f5e6e0/sensors-19-00583-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5f1f/6387249/f9e513552174/sensors-19-00583-g004.jpg

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本文引用的文献

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Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance.在具有大隧道磁电阻的原子层厚度的钨工程化垂直磁隧道结中实现电流诱导的磁化反转。
Nat Commun. 2018 Feb 14;9(1):671. doi: 10.1038/s41467-018-03140-z.