• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利：CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法，用中文像聊天一样搜索，搜遍4000万医学文献。AI智能推荐，让科研检索更轻松。

立即免费搜索

文件翻译

保留排版，准确专业，支持PDF/Word/PPT等文件格式，支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述，25分钟生成高质量综述，智能提取关键信息，辅助科研写作。

立即免费体验

硅晶体平面的演变——在25重量%的四甲基氢氧化铵中对正方形和圆形图案的蚀刻

Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH.

作者信息

Smiljanić Milče M, Lazić Žarko, Radjenović Branislav, Radmilović-Radjenović Marija, Jović Vesna

机构信息

Institute of Chemistry, Technology and Metallurgy-Centre of Microelectronic Technologies (IHTM-CMT), University of Belgrade, Njegoševa 12, 11000 Belgrade, Serbia.

Institute of Physics, University of Belgrade, Pregrevica 118, 11080 Belgrade, Serbia.

出版信息

Micromachines (Basel). 2019 Jan 31;10(2):102. doi: 10.3390/mi10020102.

DOI:10.3390/mi10020102
PMID:30708946
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6412402/
Abstract

Squares and circles are basic patterns for most mask designs of silicon microdevices. Evolution of etched Si crystallographic planes defined by square and circle patterns in the masking layer is presented and analyzed in this paper. The sides of square patterns in the masking layer are designed along predetermined crystallographic directions. Etching of a (100) silicon substrate is performed in 25 wt % tetramethylammonium hydroxide (TMAH) water solution at the temperature of 80 °C. Additionally, this paper presents three-dimensional (3D) simulations of the profile evolution during silicon etching of designed patterns based on the level-set method. We analyzed etching of designed patterns in the shape of square and circle islands. The crystallographic planes that appear during etching of 3D structures in the experiment and simulated etching profiles are determined. A good agreement between dominant crystallographic planes through experiments and simulations is obtained. The etch rates of dominant exposed crystallographic planes are also analytically calculated.

摘要

正方形和圆形是大多数硅微器件掩膜设计的基本图案。本文展示并分析了由掩膜层中的正方形和圆形图案所定义的蚀刻硅晶体平面的演变。掩膜层中正方形图案的边是沿着预定的晶体学方向设计的。在80°C的温度下，在25 wt%的四甲基氢氧化铵（TMAH）水溶液中对(100)硅衬底进行蚀刻。此外，本文基于水平集方法给出了设计图案在硅蚀刻过程中轮廓演变的三维（3D）模拟。我们分析了正方形和圆形岛状设计图案的蚀刻情况。确定了实验中3D结构蚀刻过程中出现的晶体平面以及模拟蚀刻轮廓。通过实验和模拟在主要晶体平面方面获得了良好的一致性。还对主要暴露晶体平面的蚀刻速率进行了分析计算。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c988/6412402/84a923c91b8c/micromachines-10-00102-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c988/6412402/1ca617ba5004/micromachines-10-00102-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c988/6412402/e893c70275ff/micromachines-10-00102-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c988/6412402/874ee7398f11/micromachines-10-00102-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c988/6412402/d6c59860617a/micromachines-10-00102-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c988/6412402/b511f65b31a6/micromachines-10-00102-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c988/6412402/25d0543c8c0b/micromachines-10-00102-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c988/6412402/394109155a14/micromachines-10-00102-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c988/6412402/a9addd34b0e7/micromachines-10-00102-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c988/6412402/84a923c91b8c/micromachines-10-00102-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c988/6412402/1ca617ba5004/micromachines-10-00102-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c988/6412402/e893c70275ff/micromachines-10-00102-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c988/6412402/874ee7398f11/micromachines-10-00102-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c988/6412402/d6c59860617a/micromachines-10-00102-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c988/6412402/b511f65b31a6/micromachines-10-00102-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c988/6412402/25d0543c8c0b/micromachines-10-00102-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c988/6412402/394109155a14/micromachines-10-00102-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c988/6412402/a9addd34b0e7/micromachines-10-00102-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c988/6412402/84a923c91b8c/micromachines-10-00102-g009.jpg

相似文献

1
Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH.硅晶体平面的演变——在25重量%的四甲基氢氧化铵中对正方形和圆形图案的蚀刻
Micromachines (Basel). 2019 Jan 31;10(2):102. doi: 10.3390/mi10020102.
2
Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C.在80°C下于25 wt%的四甲基氢氧化铵（TMAH）中对沿<n10>和<100>方向具有边的未补偿凸角进行蚀刻。
Micromachines (Basel). 2020 Feb 27;11(3):253. doi: 10.3390/mi11030253.
3
Curvature-Modulated Si Spherical Cap-Like Structure Fabricated by Multistep Ring Edge Etching.通过多步环形边缘蚀刻制备的曲率调制硅球帽状结构
Micromachines (Basel). 2020 Aug 10;11(8):764. doi: 10.3390/mi11080764.
4
Triangle pore arrays fabricated on Si (111) substrate by sphere lithography combined with metal-assisted chemical etching and anisotropic chemical etching.采用球光刻结合金属辅助化学刻蚀和各向异性化学刻蚀在 Si(111)衬底上制备三角形孔阵列。
Nanoscale Res Lett. 2012 Jul 19;7(1):406. doi: 10.1186/1556-276X-7-406.
5
Selective Etching of Si versus SiGe in Tetramethyl Ammonium Hydroxide Solutions with Surfactant.在含有表面活性剂的四甲基氢氧化铵溶液中硅与硅锗的选择性蚀刻
Materials (Basel). 2022 Oct 5;15(19):6918. doi: 10.3390/ma15196918.
6
3D silicon shapes through bulk nano structuration by focused ion beam implantation and wet etching.通过聚焦离子束注入和湿法刻蚀对块状纳米结构进行 3D 硅形状处理。
Nanotechnology. 2017 May 19;28(20):205301. doi: 10.1088/1361-6528/aa6c9f. Epub 2017 Apr 25.
7
Two-Layer Microstructures Fabricated by One-Step Anisotropic Wet Etching of Si in KOH Solution.通过在KOH溶液中对硅进行一步各向异性湿法蚀刻制备的双层微结构。
Micromachines (Basel). 2016 Jan 25;7(2):19. doi: 10.3390/mi7020019.
8
Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography.氢氧化四甲铵/异丙醇湿法蚀刻对通过原子力显微镜光刻制备的硅纳米线的几何形状和表面粗糙度的影响。
Beilstein J Nanotechnol. 2016 Oct 17;7:1461-1470. doi: 10.3762/bjnano.7.138. eCollection 2016.
9
Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes.揭示侧壁取向在基于氮化镓的紫外发光二极管湿法化学蚀刻中的作用。
Nanomaterials (Basel). 2019 Mar 5;9(3):365. doi: 10.3390/nano9030365.
10
The fabrication of silicon nanostructures by focused-ion-beam implantation and TMAH wet etching.采用聚焦离子束注入和 TMAH 湿法刻蚀技术制备硅纳米结构。
Nanotechnology. 2010 Apr 9;21(14):145301. doi: 10.1088/0957-4484/21/14/145301. Epub 2010 Mar 10.

引用本文的文献

1
Design and Fabrication of Silicon Pressure Sensors Based on Wet Etching Technology.基于湿法蚀刻技术的硅压力传感器的设计与制造
Micromachines (Basel). 2025 Apr 28;16(5):516. doi: 10.3390/mi16050516.
2
Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C.在80°C下于25 wt%的四甲基氢氧化铵（TMAH）中对沿<n10>和<100>方向具有边的未补偿凸角进行蚀刻。
Micromachines (Basel). 2020 Feb 27;11(3):253. doi: 10.3390/mi11030253.
3
Editorial for the Special Issue on MEMS/NEMS Sensors: Fabrication and Application.

本文引用的文献

1
Three-Dimensional Simulation of DRIE Process Based on the Narrow Band Level Set and Monte Carlo Method.基于窄带水平集和蒙特卡罗方法的深反应离子刻蚀工艺三维模拟
Micromachines (Basel). 2018 Feb 9;9(2):74. doi: 10.3390/mi9020074.
2
Level set approach to anisotropic wet etching of silicon.水平集方法用于各向异性硅的湿法刻蚀。
Sensors (Basel). 2010;10(5):4950-67. doi: 10.3390/s100504950. Epub 2010 May 17.
微机电系统/纳米机电系统传感器特刊编辑：制造与应用
Micromachines (Basel). 2019 Aug 22;10(9):554. doi: 10.3390/mi10090554.