Department of Applied Chemistry, Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo, 192-0015, Japan.
Nanoscale Res Lett. 2012 Jul 19;7(1):406. doi: 10.1186/1556-276X-7-406.
The morphological change of silicon macropore arrays formed by metal-assisted chemical etching using shape-controlled Au thin film arrays was investigated during anisotropic chemical etching in tetramethylammonium hydroxide (TMAH) aqueous solution. After the deposition of Au as the etching catalyst on (111) silicon through a honeycomb mask prepared by sphere lithography, the specimens were etched in a mixed solution of HF and H2O2 at room temperature, resulting in the formation of ordered macropores in silicon along the [111] direction, which is not achievable by conventional chemical etching without a catalyst. In the anisotropic etching in TMAH, the macropores changed from being circular to being hexagonal and finally to being triangular, owing to the difference in etching rate between the crystal planes.
采用形状可控的金薄膜阵列进行金属辅助化学刻蚀形成的硅大孔阵列，在四甲基氢氧化铵（TMAH）水溶液中各向异性化学刻蚀过程中的形态变化。通过采用球体光刻制备的蜂窝掩模，将 Au 作为蚀刻催化剂沉积在（111）硅上之后，将样品在 HF 和 H2O2 的混合溶液中于室温下进行蚀刻，从而在硅中沿着[111]方向形成有序的大孔，这是在没有催化剂的情况下常规化学蚀刻无法实现的。在 TMAH 的各向异性蚀刻中，由于晶面之间的蚀刻速率差异，大孔从圆形变为六边形，最终变为三角形。
