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溶液生长的单单元电池量子线用于制备具有超高选择性和灵敏度的自供电日盲紫外光电探测器。

Solution Grown Single-Unit-Cell Quantum Wires Affording Self-Powered Solar-Blind UV Photodetectors with Ultrahigh Selectivity and Sensitivity.

作者信息

Li Dong, Hao Simeng, Xing Guanjie, Li Yunchao, Li Xiaohong, Fan Louzhen, Yang Shihe

机构信息

College of Chemistry , Beijing Normal University , Beijing 100875 , China.

Guangdong Key Lab of Nano-Micro Material Research, School of Chemical Biology and Biotechnology, Shenzhen Graduate School , Peking University , Shenzhen 518055 , China.

出版信息

J Am Chem Soc. 2019 Feb 27;141(8):3480-3488. doi: 10.1021/jacs.8b10791. Epub 2019 Feb 15.

Abstract

As crystalline semiconductor nanowires are thinned down to a single-unit-cell thickness, many fascinating properties could arise pointing to promising applications in various fields. A grand challenge is to be able to controllably synthesize such ultrathin nanowires. Herein, we report a strategy, which synergizes a soft template with oriented attachment (ST-OA), to prepare high-quality single-unit-cell semiconductor nanowires (SSNWs). Using this protocol, we are able to synthesize for the first time ZnS and ZnSe nanowires (NWs) with only a single-unit-cell thickness (less than 1.0 nm) and a cluster-like absorption feature (i.e., with a sharp, strong, and significantly blue-shifted absorption peak). Particularly, the growth mechanism and the single-unit-cell structure of the as-prepared ZnS SSNWs are firmly established by both experimental observations and theoretical calculations. Thanks to falling into the extreme quantum confinement regime, these NWs are found to only absorb the light with wavelengths shorter than 280 nm (i.e., solar-blind UV absorption). Utilizing such a unique property, self-powered photoelectrochemical-type photodetectors (PEC PDs) based on the ZnS SSNWs are successfully fabricated. The PDs after interface modification with TiO exhibit an excellent solar-blind UV photoresponse performance, with a typical on/off ratio of 6008, a detectivity of 1.5 × 10 Jones, and a responsivity of 33.7 mA/W. This work opens the door to synthesizing and investigating a new dimension of nanomaterials with a wide range of applications.

摘要

随着晶体半导体纳米线被减薄至单胞厚度,许多迷人的特性可能会出现,这表明其在各个领域都有广阔的应用前景。一个巨大的挑战是能够可控地合成这种超薄纳米线。在此,我们报告了一种将软模板与定向附着(ST-OA)相结合的策略,以制备高质量的单胞半导体纳米线(SSNWs)。使用该方法,我们首次合成了仅具有单胞厚度(小于1.0纳米)且具有类簇吸收特征(即具有尖锐、强烈且显著蓝移的吸收峰)的ZnS和ZnSe纳米线(NWs)。特别地,通过实验观察和理论计算,明确了所制备的ZnS SSNWs的生长机制和单胞结构。由于处于极端量子限制区域,发现这些纳米线仅吸收波长小于280纳米的光(即日盲紫外吸收)。利用这一独特性质,成功制备了基于ZnS SSNWs的自供电光电化学型光电探测器(PEC PDs)。经TiO界面修饰后的光电探测器表现出优异的日盲紫外光响应性能,典型的开/关比为6008,探测率为1.5×10琼斯,响应度为33.7 mA/W。这项工作为合成和研究具有广泛应用的新型纳米材料打开了大门。

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