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基于第一性原理和群体智能的二维硒同素异形体

2D selenium allotropes from first principles and swarm intelligence.

作者信息

Liu Chao, Hu Tao, Wu Yabei, Gao Heng, Yang Yali, Ren Wei

机构信息

Department of Physics, and International Center of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, People's Republic of China. Materials Genome Institute and Shanghai Key Laboratory of High Temperature Superconductors, Shanghai University, Shanghai 200444, People's Republic of China.

出版信息

J Phys Condens Matter. 2019 Jun 12;31(23):235702. doi: 10.1088/1361-648X/ab059d. Epub 2019 Feb 8.

DOI:10.1088/1361-648X/ab059d
PMID:30736014
Abstract

Combining the particle-swarm optimization method with first-principles calculations, we explore a new category of two-dimensional (2D) monolayers composed of solely the element selenium. Three stable structures are screened from outputs of crystal search computations, namely T-Se (1T-MoS-like), C-Se (tiled 1D helical chain), and S-Se (square structure). Phonon calculations, as well as formation energy calculations have been performed to confirm the stability of the three phases. The electronic structure calculations show that both T-Se and C-Se are indirect-band-gap semiconductors, with gap values of 1.11 eV and 2.64 eV respectively when using the hybrid HSE06 functional. In particular, C-Se has a centrosymmetry-breaking structure which provides a spontaneous in-plane ferroelectric polarization of about 2.68  ×  10 C m per layer. Interestingly, S-Se has a Dirac cone that can open up a band gap of 0.11 eV if spin-orbit coupling is included. The tilted Dirac cone of S-Se shows anisotropic band dispersion as characterized with different Fermi velocities of 1.26  ×  10 and 0.24  ×  10 m s around the Dirac point. Our works enrich the family of 2D materials of selenium allotropes and show that their versatile properties could give rise to potential application in various fields.

摘要

我们将粒子群优化方法与第一性原理计算相结合,探索了一类仅由元素硒组成的新型二维(2D)单层材料。从晶体搜索计算的输出结果中筛选出三种稳定结构,即T-Se(类1T-MoS)、C-Se(平铺的一维螺旋链)和S-Se(方形结构)。已经进行了声子计算以及形成能计算,以确认这三个相的稳定性。电子结构计算表明,T-Se和C-Se均为间接带隙半导体,使用混合HSE06泛函时,其带隙值分别为1.11 eV和2.64 eV。特别地,C-Se具有中心对称性破缺结构,每层可提供约2.68×10 C m的自发面内铁电极化。有趣的是,S-Se有一个狄拉克锥,如果包含自旋轨道耦合,其能带隙可打开至0.11 eV。S-Se的倾斜狄拉克锥表现出各向异性的能带色散,在狄拉克点附近具有1.26×10和0.24×10 m s的不同费米速度。我们的工作丰富了硒同素异形体的二维材料家族,并表明它们的多样性质可能在各个领域产生潜在应用。

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