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钙钛矿太阳能电池中的体相背接触钝化提高光电电压和填充因子。

In Situ Back-Contact Passivation Improves Photovoltage and Fill Factor in Perovskite Solar Cells.

机构信息

Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada.

Key Laboratory of Photovoltaic Materials, Department of Physics and Electronics, Henan University, Kaifeng, Henan, 475004, China.

出版信息

Adv Mater. 2019 Apr;31(14):e1807435. doi: 10.1002/adma.201807435. Epub 2019 Feb 10.

Abstract

Organic-inorganic hybrid perovskite solar cells (PSCs) have seen a rapid rise in power conversion efficiencies in recent years; however, they still suffer from interfacial recombination and charge extraction losses at interfaces between the perovskite absorber and the charge-transport layers. Here, in situ back-contact passivation (BCP) that reduces interfacial and extraction losses between the perovskite absorber and the hole transport layer (HTL) is reported. A thin layer of nondoped semiconducting polymer at the perovskite/HTL interface is introduced and it is shown that the use of the semiconductor polymer permits-in contrast with previously studied insulator-based passivants-the use of a relatively thick passivating layer. It is shown that a flat-band alignment between the perovskite and polymer passivation layers achieves a high photovoltage and fill factor: the resultant BCP enables a photovoltage of 1.15 V and a fill factor of 83% in 1.53 eV bandgap PSCs, leading to an efficiency of 21.6% in planar solar cells.

摘要

有机-无机杂化钙钛矿太阳能电池 (PSCs) 近年来在功率转换效率方面取得了快速提升;然而,它们仍然在钙钛矿吸收体和电荷传输层之间的界面处存在界面复合和电荷提取损失。在此,报道了一种可以降低钙钛矿吸收体与空穴传输层 (HTL) 之间界面和提取损失的原位背面接触钝化 (BCP)。在钙钛矿/HTL 界面处引入了一层薄的无掺杂半导体聚合物,结果表明,与先前研究的基于绝缘体的钝化剂相比,使用半导体聚合物可以使用相对较厚的钝化层。结果表明,钙钛矿和聚合物钝化层之间的平带对准实现了高光电压和填充因子:所得到的 BCP 使得在 1.53eV 带隙 PSCs 中实现 1.15V 的光电压和 83%的填充因子,从而在平面太阳能电池中实现 21.6%的效率。

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