用于磁场传感器的纳米结构La-Sr-Mn-O薄膜的厚度、微晶尺寸与磁阻之间的关系

Relation between thickness, crystallite size and magnetoresistance of nanostructured La Sr Mn O films for magnetic field sensors.

作者信息

Lukose Rasuole, Plausinaitiene Valentina, Vagner Milita, Zurauskiene Nerija, Kersulis Skirmantas, Kubilius Virgaudas, Motiejuitis Karolis, Knasiene Birute, Stankevic Voitech, Saltyte Zita, Skapas Martynas, Selskis Algirdas, Naujalis Evaldas

机构信息

Department of Material Science and Electrical Engineering, Center for Physical Sciences and Technology, Sauletekio av. 3, LT-10257 Vilnius, Lithuania.

Institute of Chemistry, Faculty of Chemistry and Geosciences, Vilnius University, Naugarduko 24, LT- 03225 Vilnius, Lithuania.

出版信息

Beilstein J Nanotechnol. 2019 Jan 23;10:256-261. doi: 10.3762/bjnano.10.24. eCollection 2019.

DOI:10.3762/bjnano.10.24

PMID:30746319

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6350892/

Abstract

In the present study the advantageous pulsed-injection metal organic chemical vapour deposition (PI-MOCVD) technique was used for the growth of nanostructured La Sr Mn O (LSMO) films on ceramic AlO substrates. The compositional, structural and magnetoresistive properties of the nanostructured manganite were changed by variation of the processing conditions: precursor solution concentration, supply frequency and number of supply sources during the PI-MOCVD growth process. The results showed that the thick (≈400 nm) nanostructured LSMO films, grown using an additional supply source of precursor solution in an exponentially decreasing manner, exhibit the highest magnetoresistance and the lowest magnetoresistance anisotropy. The possibility to use these films for the development of magnetic field sensors operating at room temperature is discussed.

摘要

在本研究中，采用了具有优势的脉冲注入金属有机化学气相沉积（PI-MOCVD）技术，在陶瓷AlO衬底上生长纳米结构的La Sr Mn O（LSMO）薄膜。通过改变PI-MOCVD生长过程中的工艺条件：前驱体溶液浓度、供应频率和供应源数量，改变了纳米结构锰酸盐的成分、结构和磁阻特性。结果表明，在PI-MOCVD生长过程中使用额外的前驱体溶液供应源以指数递减方式生长的厚（约400 nm）纳米结构LSMO薄膜表现出最高的磁阻和最低的磁阻各向异性。讨论了将这些薄膜用于开发室温下工作的磁场传感器的可能性。