Department of Functional Materials and Electronics, Center for Physical Sciences and Technology, Sauletekio Ave. 3, 10257 Vilnius, Lithuania.
Faculty of Electronics, Vilnius Gediminas Technical University, 10223 Vilnius, Lithuania.
Sensors (Basel). 2023 Jan 28;23(3):1435. doi: 10.3390/s23031435.
A measurement system based on the colossal magnetoresistance CMR-B-scalar sensor was developed for the measurement of short-duration high-amplitude magnetic fields. The system consists of a magnetic field sensor made from thin nanostructured manganite film with minimized memory effect, and a magnetic field recording module. The memory effect of the LaSr(MnCo)O manganite films doped with different amounts of Co and Mn was investigated by measuring the magnetoresistance (MR) and resistance relaxation in pulsed magnetic fields up to 20 T in the temperature range of 80-365 K. It was found that for low-temperature applications, films doped with Co (LSMCO) are preferable due to the minimized magnetic memory effect at these temperatures, compared with LSMO films without Co. For applications at temperatures higher than room temperature, nanostructured manganite LSMO films with increased Mn content above the stoichiometric level have to be used. These films do not exhibit magnetic memory effects and have higher MR values. To avoid parasitic signal due to electromotive forces appearing in the transmission line of the sensor during measurement of short-pulsed magnetic fields, a bipolar-pulsed voltage supply for the sensor was used. For signal recording, a measurement module consisting of a pulsed voltage generator with a frequency up to 12.5 MHz, a 16-bit ADC with a sampling rate of 25 MHz, and a microprocessor was proposed. The circuit of the measurement module was shielded against low- and high-frequency electromagnetic noise, and the recorded signal was transmitted to a personal computer using a fiber optic link. The system was tested using magnetic field generators, generating magnetic fields with pulse durations ranging from 3 to 20 μs. The developed magnetic field measurement system can be used for the measurement of high-pulsed magnetic fields with pulse durations in the order of microseconds in different fields of science and industry.
开发了一种基于巨磁电阻 CMR-B 标量传感器的测量系统,用于测量短持续时间、高振幅磁场。该系统由一个磁场传感器和一个磁场记录模块组成,磁场传感器由具有最小记忆效应的纳米结构锰氧化物薄膜制成。通过在 80-365 K 的温度范围内测量高达 20 T 的脉冲磁场中的磁电阻(MR)和电阻弛豫,研究了不同 Co 和 Mn 掺杂量的 LaSr(MnCo)O 锰氧化物薄膜的记忆效应。结果表明,对于低温应用,掺杂 Co 的 LSMCO 薄膜(LSMCO)由于在这些温度下具有最小的磁记忆效应,因此优于不含 Co 的 LSMO 薄膜。对于高于室温的应用,必须使用具有高于化学计量水平的 Mn 含量的纳米结构锰氧化物 LSMO 薄膜。这些薄膜没有磁记忆效应,并且具有更高的 MR 值。为了避免在测量短脉冲磁场期间传感器传输线中出现电动势引起的寄生信号,使用了用于传感器的双极脉冲电压源。为了记录信号,提出了一个由具有高达 12.5 MHz 频率的脉冲电压发生器、具有 25 MHz 采样率的 16 位 ADC 和微处理器组成的测量模块。测量模块的电路屏蔽了低频和高频电磁噪声,并使用光纤链路将记录的信号传输到个人计算机。该系统使用磁场发生器进行了测试,产生的磁场脉冲持续时间从 3 到 20 μs 不等。所开发的磁场测量系统可用于测量科学和工业中不同领域具有微秒级脉冲持续时间的高脉冲磁场。