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定制在石英上生长的透明硼掺杂碳纳米壁的电学/光学性质。

Tailoring Electro/Optical Properties of Transparent Boron-Doped Carbon Nanowalls Grown on Quartz.

作者信息

Pierpaoli Mattia, Ficek Mateusz, Rycewicz Michał, Sawczak Mirosław, Karczewski Jakub, Ruello Maria Letizia, Bogdanowicz Robert

机构信息

Department of Materials, Environmental Sciences and Urban Planning, Università Politecnica delle Marche, 60131 Ancona, Italy.

Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunication and Informatics, Gdańsk University of Technology, 80-233 Gdańsk, Poland.

出版信息

Materials (Basel). 2019 Feb 12;12(3):547. doi: 10.3390/ma12030547.

Abstract

Carbon nanowalls (CNWs) have attracted much attention for numerous applications in electrical devices because of their peculiar structural characteristics. However, it is possible to set synthesis parameters to vary the electrical and optical properties of such CNWs. In this paper, we demonstrate the direct growth of highly transparent boron-doped nanowalls (B-CNWs) on optical grade fused quartz. The effect of growth temperature and boron doping on the behavior of boron-doped carbon nanowalls grown on quartz was studied in particular. Temperature and boron inclusion doping level allow for direct tuning of CNW morphology. It is possible to operate with both parameters to obtain a transparent and conductive film; however, boron doping is a preferred factor to maintain the transparency in the visible region, while a higher growth temperature is more effective to improve conductance. Light transmittance and electrical conductivity are mainly influenced by growth temperature and then by boron doping. Tailoring B-CNWs has important implications for potential applications of such electrically conductive transparent electrodes designed for energy conversion and storage devices.

摘要

碳纳米壁(CNWs)因其独特的结构特性,在电子器件的众多应用中备受关注。然而,可以通过设置合成参数来改变此类碳纳米壁的电学和光学性质。在本文中,我们展示了在光学级熔融石英上直接生长高透明硼掺杂纳米壁(B-CNWs)。特别研究了生长温度和硼掺杂对在石英上生长的硼掺杂碳纳米壁行为的影响。温度和硼掺入掺杂水平可直接调节碳纳米壁的形态。可以通过这两个参数来获得透明导电薄膜;然而,硼掺杂是保持可见光区域透明度的优选因素,而较高的生长温度对提高电导率更有效。透光率和电导率主要受生长温度影响,其次受硼掺杂影响。定制硼掺杂碳纳米壁对于为能量转换和存储设备设计的此类导电透明电极的潜在应用具有重要意义。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/84bd/6385157/4baaa53b31a7/materials-12-00547-g001.jpg

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