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通过等离子体处理制备的定向碳纳米结构:最新进展与未来挑战

Oriented Carbon Nanostructures by Plasma Processing: Recent Advances and Future Challenges.

作者信息

Santhosh Neelakandan M, Filipič Gregor, Tatarova Elena, Baranov Oleg, Kondo Hiroki, Sekine Makoto, Hori Masaru, Ostrikov Kostya Ken, Cvelbar Uroš

机构信息

Jožef Stefan Institute, Jamova cesta 39, SI-1000 Ljubljana, Slovenia.

Jozef Stefan International Postgraduate School, Jamova cesta 39, SI-1000 Ljubljana, Slovenia.

出版信息

Micromachines (Basel). 2018 Nov 1;9(11):565. doi: 10.3390/mi9110565.

DOI:10.3390/mi9110565
PMID:30715064
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6265782/
Abstract

Carbon, one of the most abundant materials, is very attractive for many applications because it exists in a variety of forms based on dimensions, such as zero-dimensional (0D), one-dimensional (1D), two-dimensional (2D), and-three dimensional (3D). Carbon nanowall (CNW) is a vertically-oriented 2D form of a graphene-like structure with open boundaries, sharp edges, nonstacking morphology, large interlayer spacing, and a huge surface area. Plasma-enhanced chemical vapor deposition (PECVD) is widely used for the large-scale synthesis and functionalization of carbon nanowalls (CNWs) with different types of plasma activation. Plasma-enhanced techniques open up possibilities to improve the structure and morphology of CNWs by controlling the plasma discharge parameters. Plasma-assisted surface treatment on CNWs improves their stability against structural degradation and surface chemistry with enhanced electrical and chemical properties. These advantages broaden the applications of CNWs in electrochemical energy storage devices, catalysis, and electronic devices and sensing devices to extremely thin black body coatings. However, the controlled growth of CNWs for specific applications remains a challenge. In these aspects, this review discusses the growth of CNWs using different plasma activation, the influence of various plasma-discharge parameters, and plasma-assisted surface treatment techniques for tailoring the properties of CNWs. The challenges and possibilities of CNW-related research are also discussed.

摘要

碳是最丰富的材料之一,因其基于维度存在多种形式,如零维(0D)、一维(1D)、二维(2D)和三维(3D),故而对许多应用极具吸引力。碳纳米壁(CNW)是一种垂直取向的二维类石墨烯结构,具有开放边界、尖锐边缘、非堆叠形态、大层间距和巨大表面积。等离子体增强化学气相沉积(PECVD)通过不同类型的等离子体活化被广泛用于碳纳米壁(CNW)的大规模合成与功能化。等离子体增强技术通过控制等离子体放电参数为改善碳纳米壁的结构和形态开辟了可能性。对碳纳米壁进行等离子体辅助表面处理可提高其抗结构降解的稳定性以及表面化学性质,并增强电学和化学性能。这些优势拓宽了碳纳米壁在电化学储能器件、催化、电子器件和传感器件乃至极薄黑体涂层等方面的应用。然而,针对特定应用对碳纳米壁进行可控生长仍然是一项挑战。在这些方面,本综述讨论了使用不同等离子体活化方式生长碳纳米壁、各种等离子体放电参数的影响以及用于定制碳纳米壁性能的等离子体辅助表面处理技术。还讨论了与碳纳米壁相关研究的挑战和可能性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/be84/6265782/42779d86cd92/micromachines-09-00565-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/be84/6265782/c324138f5d27/micromachines-09-00565-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/be84/6265782/e6c78dd71280/micromachines-09-00565-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/be84/6265782/7e41bc896f6f/micromachines-09-00565-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/be84/6265782/90dfe4cf0628/micromachines-09-00565-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/be84/6265782/ee615d3872e1/micromachines-09-00565-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/be84/6265782/04fedc29171c/micromachines-09-00565-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/be84/6265782/42779d86cd92/micromachines-09-00565-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/be84/6265782/c324138f5d27/micromachines-09-00565-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/be84/6265782/e6c78dd71280/micromachines-09-00565-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/be84/6265782/7e41bc896f6f/micromachines-09-00565-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/be84/6265782/90dfe4cf0628/micromachines-09-00565-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/be84/6265782/ee615d3872e1/micromachines-09-00565-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/be84/6265782/04fedc29171c/micromachines-09-00565-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/be84/6265782/42779d86cd92/micromachines-09-00565-g008.jpg

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