Asif Muhammad, Xi Wang, Hua Zhao, Peng Ding, Jan Saeedullah, Zhi Jin
Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China.
Department of Physics, Islamia College Peshawar, KPK, 25120, Pakistan.
J Nanosci Nanotechnol. 2019 Jul 1;19(7):3887-3892. doi: 10.1166/jnn.2019.16317.
InP based HEMTs are of great importance, due to their enormous potential in a high-speed modern microwave circuit, power amplifier, and low noise amplifier applications. Therefore, an accurate non-linear equivalent circuit model of HEMTs is very important for an accurate circuit design. This paper presents improved characterization and accurate modelling of drain current derivatives of InP based HEMTs devices. The proposed model is simple, easy to extract, and suitable for implementation in simulation tools. The function is extended to increase the flexibility of the proposed model. A gate-drain dependent current source is added to increase the S-parameter fitting. A one-dimensional intrinsic multi-bias capacitances model is introduced to avoid convergence failure. The fitting results of the characteristics and its high order derivatives show high accuracy. In addition, S-parameters and for the proposed model are compared with the original Angelov model. The proposed model shows better accuracy.
基于磷化铟的高电子迁移率晶体管（HEMT）非常重要，因为它们在高速现代微波电路、功率放大器和低噪声放大器应用中具有巨大潜力。因此，准确的HEMT非线性等效电路模型对于精确的电路设计非常重要。本文介绍了基于磷化铟的HEMT器件漏极电流导数的改进表征和精确建模。所提出的模型简单、易于提取，适用于在仿真工具中实现。该函数被扩展以增加所提出模型的灵活性。添加了一个栅极-漏极相关电流源以提高S参数拟合度。引入了一维本征多偏置电容模型以避免收敛失败。特性及其高阶导数的拟合结果显示出高精度。此外，将所提出模型的S参数与原始安杰洛夫模型进行了比较。所提出的模型显示出更好的准确性。
