一种用于0.1μm AlGaN/GaN高电子迁移率晶体管（HEMT）工艺的改进大信号模型及其在W波段实际单片微波集成电路（MMIC）设计中的应用
An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band.
作者信息
Li Junfeng, Mao Shuman, Xu Yuehang, Zhao Xiaodong, Wang Weibo, Guo Fangjing, Zhang Qingfeng, Wu Yunqiu, Zhang Bing, Chen Tangsheng, Yan Bo, Xu Ruimin, Li Yanrong
机构信息
School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 611731, China.
Nanjing Electronic Devices Institute, Nanjing 210016, China.
出版信息
Micromachines (Basel). 2018 Aug 10;9(8):396. doi: 10.3390/mi9080396.
An improved empirical large signal model for 0.1 µm AlGaN/GaN high electron mobility transistor (HEMT) process is proposed in this paper. The short channel effect including the drain induced barrier lowering (DIBL) effect and channel length modulation has been considered for the accurate description of DC characteristics. In-house AlGaN/GaN HEMTs with a gate-length of 0.1 μm and different dimensions have been employed to validate the accuracy of the large signal model. Good agreement has been achieved between the simulated and measured S parameters, I-V characteristics and large signal performance at 28 GHz. Furthermore, a monolithic microwave integrated circuit (MMIC) power amplifier from 92 GHz to 96 GHz has been designed for validation of the proposed model. Results show that the improved large signal model can be used up to W band.
本文提出了一种用于0.1μm AlGaN/GaN高电子迁移率晶体管（HEMT）工艺的改进经验大信号模型。为了准确描述直流特性，考虑了包括漏极感应势垒降低（DIBL）效应和沟道长度调制在内的短沟道效应。采用了栅长为0.1μm且尺寸不同的内部AlGaN/GaN HEMT来验证大信号模型的准确性。在28GHz下，模拟和测量的S参数、I-V特性以及大信号性能之间取得了良好的一致性。此外，还设计了一个92GHz至96GHz的单片微波集成电路（MMIC）功率放大器，以验证所提出的模型。结果表明，改进后的大信号模型可用于W波段。
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