Zhang Yachao, Li Yifan, Wang Jia, Shen Yiming, Du Lin, Li Yao, Wang Zhizhe, Xu Shengrui, Zhang Jincheng, Hao Yue
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, No.2 South TaiBai Road, Xi'an, 710071, China.
Shanghai Academy of Spaceflight Technology, Shanghai, 201109, China.
Nanoscale Res Lett. 2020 May 20;15(1):114. doi: 10.1186/s11671-020-03345-6.
In this work, AlGaN double channel heterostructure is proposed and grown by metal organic chemical vapor deposition (MOCVD), and high-performance AlGaN double channel high electron mobility transistors (HEMTs) are fabricated and investigated. The implementation of double channel feature effectively improves the transport properties of AlGaN channel heterostructures. On one hand, the total two dimensional electron gas (2DEG) density is promoted due to the double potential wells along the vertical direction and the enhanced carrier confinement. On the other hand, the average 2DEG density in each channel is reduced, and the mobility is elevated resulted from the suppression of carrier-carrier scattering effect. As a result, the maximum drain current density (I) of AlGaN double channel HEMTs reaches 473 mA/mm with gate voltage of 0 V. Moreover, the superior breakdown performance of the AlGaN double channel HEMTs is also demonstrated. These results not only show the great application potential of AlGaN double channel HEMTs in microwave power electronics but also develop a new thinking for the studies of group III nitride-based electronic devices.
在本工作中，通过金属有机化学气相沉积（MOCVD）提出并生长了AlGaN双通道异质结构，并制备和研究了高性能AlGaN双通道高电子迁移率晶体管（HEMT）。双通道特性的实现有效地改善了AlGaN沟道异质结构的输运特性。一方面，由于沿垂直方向的双势阱和增强的载流子限制，二维电子气（2DEG）的总密度得到提高。另一方面，每个沟道中的平均2DEG密度降低，并且由于载流子-载流子散射效应的抑制，迁移率提高。结果，AlGaN双通道HEMT在栅极电压为0 V时的最大漏极电流密度（I）达到473 mA/mm。此外，还展示了AlGaN双通道HEMT优异的击穿性能。这些结果不仅表明AlGaN双通道HEMT在微波功率电子学中的巨大应用潜力，而且为基于III族氮化物的电子器件研究开辟了新思路。
