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具有高光电化学性能的Bi₂MoO/ZnO异质结纳米片阵列的制备

Fabrication of Bi₂MoO/ZnO Heterojunction Nanosheet Array with High Photoelectrochemical Property.

作者信息

Jia Yulong, Ma Ying, Lin Yinhe, Tang Jinzhu, Shi Wenbing

机构信息

School of Chemistry and Chemical Engineering, Yangtze Normal University, Chongqing, 408000, China.

出版信息

J Nanosci Nanotechnol. 2019 Jul 1;19(7):4007-4014. doi: 10.1166/jnn.2019.16672.

Abstract

Herein, we demonstrate the synthesis of Bi₂MoO nanosheet array followed with electrodepositing ZnO layer, resulting in Bi₂MoO/ZnO heterojunction nanosheet array. The thickness of nanoparticle-based ZnO layer on the surface of Bi₂MoO nanosheets can be rational controlled by regulating the electrodepositing time. The combination of oriented Bi₂MoO nanosheet array and ZnO layer could not only enhance the conductivity and surface area but also facilitate the charge separation. As expected, the heterojunction electrode yields a photocurrent density of 430 A/cm² at 0.8 , which is much higher than that of pristine Bi₂MoO and ZnO nanosheet array.

摘要

在此,我们展示了Bi₂MoO纳米片阵列的合成,并随后电沉积ZnO层,从而得到Bi₂MoO/ZnO异质结纳米片阵列。通过调节电沉积时间,可以合理控制Bi₂MoO纳米片表面基于纳米颗粒的ZnO层的厚度。取向的Bi₂MoO纳米片阵列与ZnO层的结合不仅可以提高导电性和表面积,还能促进电荷分离。正如预期的那样,该异质结电极在0.8时产生的光电流密度为430 A/cm²,远高于原始的Bi₂MoO和ZnO纳米片阵列。

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