Center for Nonlinear Phenomena and Complex Systems, Université Libre de Bruxelles (U.L.B.), Campus Plaine, Code Postal 231, B-1050 Brussels, Belgium.
Phys Rev E. 2019 Jan;99(1-1):012137. doi: 10.1103/PhysRevE.99.012137.
We present a stochastic approach for charge transport in transistors. In this approach, the electron and hole densities are governed by diffusion-reaction stochastic differential equations satisfying local detailed balance and the electric field is determined with the Poisson equation. The approach is consistent with the laws of electricity, thermodynamics, and microreversibility. In this way, the signal amplifying effect of transistors is verified under their working conditions. We also perform the full counting statistics of the two electric currents coupled together in transistors and we show that the fluctuation theorem holds for their joint probability distribution. Similar results are obtained including the displacement currents. In addition, the Onsager reciprocal relations and their generalizations to nonlinear transport properties deduced from the fluctuation theorem are numerically shown to be satisfied.
我们提出了一种用于晶体管中电荷输运的随机方法。在这种方法中，电子和空穴密度由满足局部详细平衡的扩散-反应随机微分方程控制，并且电场由泊松方程确定。该方法符合电、热力学和微观可逆性定律。通过这种方式，在晶体管的工作条件下验证了晶体管的信号放大效应。我们还对晶体管中耦合在一起的两个电流进行了全计数统计，结果表明它们的联合概率分布满足涨落定理。类似的结果也包括位移电流。此外，数值结果表明，从涨落定理推导出的 Onsager 倒易关系及其对非线性输运性质的推广是满足的。
