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在 FTO 电极上形成的脱硫孤菌 PilR 缺陷突变体生物膜的电化学响应中主要 pilA 转录调控因子的影响。

Influence of the major pilA transcriptional regulator in electrochemical responses of Geobacter sulfureducens PilR-deficient mutant biofilm formed on FTO electrodes.

机构信息

Instituto de Energías Renovables, Universidad Nacional Autónoma de México, Priv. Xochicalco, 62580 Temixco, Morelos, Mexico.

Instituto de Energías Renovables, Universidad Nacional Autónoma de México, Priv. Xochicalco, 62580 Temixco, Morelos, Mexico; Departamento de Ingeniería Celular y Biocatálisis, Instituto de Biotecnología, Universidad Nacional Autónoma de México, Av. Universidad 2001. Col. Chamilpa, Cuernavaca, Morelos, Mexico.

出版信息

Bioelectrochemistry. 2019 Jun;127:145-153. doi: 10.1016/j.bioelechem.2019.02.006. Epub 2019 Feb 22.

DOI:10.1016/j.bioelechem.2019.02.006
PMID:30825658
Abstract

Geobacter sulfurreducens is a model organism for understanding the role of bacterial structures in extracellular electron transfer mechanism (EET). This kind of bacteria relies on different structures such as type IV pili and over 100 c-type cytochromes to perform EET towards soluble and insoluble electron acceptors, including electrodes. To our knowledge, this work is the first electrochemical study comparing a G. sulfurreducens PilR-deficient mutant and wild type biofilms developed on fluorine-doped tin oxide (FTO) electrodes. Open circuit potential (OCP), electrochemical impedance spectroscopy (EIS) and cyclic voltammetry (CV), were used to evaluate the electroactive properties of biofilms grown without externally imposed potential. Parallel studies of Confocal Laser Scanning Microscopy (CLSM) correlated with the electrochemical results. PilR is a transcriptional regulator involved in the expression of a wide variety of genes, including pilA (pilus structural protein) relevant c-type cytochromes and some other genes involved in biofilm formation and EET processes. Our findings suggest that PilR-deficient mutant forms a thinner (CLSM analysis) and less conductive biofilm (EIS analysis) than wild type, exhibiting different and irreversible redox processes at the interface (CV analysis). Additionally, this work reinforces some of the remarkable features described in previous reports about this G. sulfurreducens mutant.

摘要

脱硫弧菌是一种用于理解细菌结构在外电子转移机制(EET)中作用的模式生物。这种细菌依赖于不同的结构,如 IV 型菌毛和超过 100 种 c 型细胞色素,以向可溶性和不溶性电子受体(包括电极)进行 EET。据我们所知,这项工作是首次对在掺氟氧化锡(FTO)电极上生长的脱硫弧菌 PilR 缺失突变体和野生型生物膜进行电化学比较的研究。开路电位(OCP)、电化学阻抗谱(EIS)和循环伏安法(CV)用于评估在没有外加电位的情况下生长的生物膜的电活性。共聚焦激光扫描显微镜(CLSM)的平行研究与电化学结果相关联。PilR 是一种参与多种基因表达的转录调节剂,包括与菌毛结构蛋白 pilA 相关的 c 型细胞色素和一些其他参与生物膜形成和 EET 过程的基因。我们的发现表明,PilR 缺失突变体形成的生物膜比野生型更薄(CLSM 分析)和导电性更差(EIS 分析),在界面处表现出不同且不可逆的氧化还原过程(CV 分析)。此外,这项工作强化了以前关于这种脱硫弧菌突变体的一些显著特征的描述。

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