Gao Yuanhong, Yi Ya, Wang Xinwei, Meng Hong, Lei Dangyuan, Yu Xue-Feng, Chu Paul K, Li Jia
Materials Interfaces Center, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China.
School of Advanced Materials, Shenzhen Graduate School, Peking University, Shenzhen, 518055, P. R. China.
Adv Mater. 2019 Apr;31(16):e1900763. doi: 10.1002/adma.201900763. Epub 2019 Mar 4.
The interfacial charge effect is crucial for high-sensitivity organic phototransistors (OPTs), but conventional layered and hybrid OPTs have a trade-off in balancing the separation, transport, and recombination of photogenerated charges, consequently impacting the device performance. Herein, a novel hybrid-layered phototransistor (HL-OPT) is reported with significantly improved photodetection performance, which takes advantages of both the charge-trapping effect (CTE) and efficient carrier transport. The HL-OPT consisting of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) as conduction channel, C8-BTBT:[6,6]-phenyl-C -butyric acid methyl ester (PC BM) bulk heterojunction as photoactive layer, and sandwiched MoO interlayer as a charge-transport interlayer exhibits outstanding photodetection characteristics such as a photosensitivity (I /I ) of 2.9 × 10 , photoresponsivity (R) of 8.6 × 10 A W , detectivity (D*) of 3.4 × 10 Jones, and external quantum efficiency of 3 × 10 % under weak light illumination of 32 µW cm . The mechanism and strategy described here provide new insights into the design and optimization of high-performance OPTs spanning the ultraviolet and near infrared (NIR) range as well as fundamental issues pertaining to the electronic and photonic properties of the devices.
界面电荷效应对于高灵敏度有机光电晶体管(OPTs)至关重要,但传统的层状和混合式OPTs在平衡光生电荷的分离、传输和复合方面存在权衡,从而影响器件性能。在此,报道了一种新型混合层状光电晶体管(HL-OPT),其具有显著提高的光探测性能,它利用了电荷俘获效应(CTE)和高效的载流子传输。该HL-OPT由作为传导通道的2,7-二辛基[1]苯并噻吩并[3,2-b][1]苯并噻吩(C8-BTBT)、作为光活性层的C8-BTBT:[6,6]-苯基-C-丁酸甲酯(PC BM)体异质结以及夹在中间的MoO中间层作为电荷传输中间层组成,在32 μW cm的弱光照射下,表现出出色的光探测特性,如光敏度(I /I )为2.9×10 、光响应度(R)为8.6×10 A W 、探测率(D*)为3.4×10 Jones以及外量子效率为3×10 %。这里描述的机制和策略为跨越紫外和近红外(NIR)范围的高性能OPTs的设计和优化以及与器件电子和光子特性相关的基本问题提供了新的见解。