Jeong ShinYoung, Kyhm Jihoon, Cha Soon-Kyu, Hwang Do Kyung, Ju Byeong-Kwon, Park Joon-Suh, Kang Seong Jun, Han Il Ki
Nanophotonics Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.
School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea.
Small. 2019 Mar;15(13):e1900008. doi: 10.1002/smll.201900008. Epub 2019 Mar 4.
With ever-growing technological demands in the imaging sensor industry for autonomous driving and augmented reality, developing sensors that can satisfy not only image resolution but also the response speed becomes more challenging. Herein, the focus is on developing a high-speed photosensor capable of obtaining high-resolution, high-speed imaging with colloidal quantum dots (QDs) as the photosensitive material. In detail, high-speed QD photodiodes are demonstrated with rising and falling times of τ = 28.8 ± 8.34 ns and τ = 40 ± 9.81 ns, respectively, realized by fast separation of electron-hole pairs due to the action of internal electric field at the QD interface, mainly by the interaction between metal oxide and the QD's ligands. Such energy transfer relations are analyzed and interpreted with time-resolved photoluminescence measurements, providing physical understanding of the device and working principles.
随着成像传感器行业对自动驾驶和增强现实的技术需求不断增长，开发不仅能满足图像分辨率，还能满足响应速度的传感器变得更具挑战性。在此，重点是开发一种高速光电传感器，该传感器能够以胶体量子点（QD）作为光敏材料实现高分辨率、高速成像。具体而言，通过QD界面处内电场的作用，主要是金属氧化物与QD配体之间的相互作用，实现电子 - 空穴对的快速分离，从而展示出上升和下降时间分别为τ = 28.8 ± 8.34 ns和τ = 40 ± 9.81 ns的高速QD光电二极管。通过时间分辨光致发光测量对这种能量转移关系进行了分析和解释，为该器件及其工作原理提供了物理理解。
